Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Cosendey, Gatien; Castiglia, A.; Rossbach, Georg; Carlin, J.-F.; Grandjean, N.

doi:10.1063/1.4757873

Cited by 148 publications

(90 citation statements)

References 18 publications

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“…4 for the InAlN and GaN layers is due to the amorphous glue used during sample preparation that is covering the observed region. However, another contrast is visible in the InAlN layer and not inthe GaNsubstrate, especially when using theg= (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) diffraction condition. The same contrasts are visible in InAlN layers outside the V-defects on the plan-view images of Fig.5 andFig.…”

Section: B Phase Separation Due To V-defectsmentioning

confidence: 99%

“…8,9 Recently, p-type doping of InAlN layers was demonstrated. 10 Finally, an optically-pumped verticalexternalcavity surface emitting laser, 11 and anelectrically-pumped monolithic vertical cavity surface emitting laser 12 have been demonstrated with the use of a bottom InAlN/GaN DBR grown on free-standing (FS) GaN substrate. All these applications are reviewed in detail in Refs.13 and 14.…”

Section: Introductionmentioning

confidence: 99%

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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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Thanks toits high refractive index contrast, band gap and polarization mismatch compared to GaN, In 0.17 Al 0.83 N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diodes, orhigh electron mobility transistors. In order to study the structural degradation mechanism of InAlN layers with increasing thickness, we performed metalorganic vapor phase epitaxy of InAlN layers of thicknesses ranging from 2 to 500 nm, on free-standing (0001) GaN substrates with a low density of threading dislocations, for In compositions of 13.5% (layers under tensile strain), and 19.7%(layers under compressive strain). In both cases, a surface morphology with hillocks isinitially observed, followed by the appearance of V-defects. We propose that those hillocks arise due to kinetic roughening, and that V-defects subsequently appear beyonda critical hillock size. It is seen that the critical thickness for the appearance of V-defects increases together with the surface diffusion length either by increasing the temperature or the In flux because of asurfactant effect.In thick InAlN layers, a better (worse) In incorporation occurring on the concave (convex) shape surfaces of the V-defects is observed leading to a top phase-separated InAlN layer lying on the initial homogeneous InAlN layerafterV-defects coalescence.It is suggested that similar mechanisms could be responsible for the degradation of thick InGaN layers.

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Section: B Phase Separation Due To V-defectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Perillat-Merceroz

Cosendey

Carlin

et al. 2013

Journal of Applied Physics

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“…In GaAs-VCSELs simultaneous current and optical confinement is achieved by selective oxidation of a high Al-content AlGaAs-layer. Recently, new approaches for current confinement in GaN-VCSELs have been developed such as plasma damage of p-GaN 32 , ion implantation 36,47 , and airgaps by photoelectrochemical etching 38 . A number of key challenges in GaN-VCSEL will be described in more detail in the next chapter.…”

Section: State-of-the-artmentioning

confidence: 99%

“…Publications from a few groups followed, and since the first demonstrations there have been a lot of progress in the field of electrically injected III-nitride based VCSELs, both in terms of new technological solutions as well as performance characteristics. 31 To date there are seven groups in the world who have demonstrated lasing under electrical injection [27][28][29][30][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47] , and the different approaches and structures are summarized in Table 1. The performance characteristics of published devices, in terms of output power and threshold current density, are plotted in Fig.…”

Section: State-of-the-artmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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“…More sophisticated devices like blue vertical cavity surface emitting lasers (VCSELs) may find implementation in high-resolution printing and bio-sampling [8,9]. Recently, III-nitride-based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates have been demonstrated [10]. Lasing was achieved at room temperature under pulsed electrical injection.…”

Section: Introductionmentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Cited by 148 publications

References 18 publications

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Progress and challenges in electrically pumped GaN-based VCSELs

GaN nanostructuring for the fabrication of thin membranes and emerging applications

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