Boron implantation effects in CdS thin films grown by chemical synthesis

Narayanan, KS; Yamaguchi, Masafumi; Dávila-Pintle, J. A.; Lozada‐Morales, R.; Portillo-Moreno, O.; Zelaya-Ángel, O.

doi:10.1016/j.vacuum.2007.04.004

Search citation statements

Order By: Relevance

Paper Sections

Select...

Cadmium Sulphide (Cds)1

-31

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2009

2024

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 6 publications

(2 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effects of dopants, such as; chlorine, iodine, boron and indium on properties of CdS thin films have been reported [43e45]. Narayanan et al [46,47] showed that nitrogen and boron ions implanted CdS thin films exist in CdS phase. Nair et al [48] used nanostructure CdS thin films for fabricating homojunction CdS solar cells.…”

Section: Cadmium Sulphide (Cds)mentioning

confidence: 99%

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Pawar

Kim

et al. 2011

Current Applied Physics

330

124

View full text Add to dashboard Cite

Section: Cadmium Sulphide (Cds)mentioning

confidence: 99%

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Pawar

Kim

et al. 2011

Current Applied Physics

330

124

View full text Add to dashboard Cite

“…Similar observations were reported for boron doped CdS thin films prepared by ion implantation. 33 Such optical phonon behaviors are related to strain and crystalline quality ͑which is influenced by lattice disorder͒.…”

Section: -3mentioning

confidence: 99%

Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

Chandramohan

Kanjilal

Sarangi

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

This paper reports on structural, optical, vibrational, and morphological properties of cobalt-doped CdS thin films, prepared by 90 keV Co + implantation at room temperature. In this work, we have used cobalt concentration in the range of 0.34-10.8 at. %. Cobalt doping does not lead to the formation of any secondary phase, either in the form of metallic clusters or impurity complexes. However, with increasing cobalt concentration a decrease in the optical band gap, from 2.39 to 2.26 eV, is observed. This reduction is addressed on the basis of band tailing due to the creation of localized energy states in association with Urbach energy calculations. In addition, implantation gives rise to grain growth and increase in the surface roughness. Size and shape fluctuations of individual CdS grains, at higher fluences, give rise to inhomogeneity in strain. The results are discussed in the light of ion-matter interaction in the keV regime.

show abstract

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

et al. 2010

View full text Add to dashboard Cite

Boron implantation effects in CdS thin films grown by chemical synthesis

Cited by 6 publications

References 15 publications

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

Contact Info

Product

Resources

About