Boron Implanted, Laser Annealed p+ Emitter for n-type Interdigitated Back-contact Solar Cells

Quantitative Surface Recombination Imaging of Single Side Processed Silicon Wafers Obtained by Photoluminescence Modeling

“…The first set of samples were ion implanted with boron atoms and subsequently excimer laser annealed [23] across an area suitable for QSSPC measurements. One sample is symmetrically processed, and a second on one side only, with the other side metalized with vacuum-evaporated Aluminum.…”