Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

Han, Qi; Yan, Biao; Gao, Teng; Meng, Jie; Zhang, Yanfeng; Liu, Zhongfan; Wu, Xiaosong; Yu, Dapeng

doi:10.1002/smll.201303697

Cited by 24 publications

(14 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this structure, the GNR is sandwiched between two thin insulator layers in a double metal gate topology in order to maximize the electrostatic control of the gate electrode over the GNR channel. A h-BN layer has been used as a buffer layer [34], leading to the growth of uniform and charge trapping free high-k gate insulator due to protection of GNR against environmental influence [18]. The proposed GNR FET has the HfO 2 dielectric layer with the relative dielectric permittivity e r = 24 and the oxide thickness t ox = 1.2 nm, while the dielectric permittivity of h-BN layers is e r = 4 and the interlayer spacing between graphene and h-BN layer is assumed 3 Å [35].…”

Section: Device Structurementioning

confidence: 99%

Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

Banadaki

Srivastava

2015

Solid-State Electronics

View full text Add to dashboard Cite

Section: Device Structurementioning

confidence: 99%

Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

Banadaki

Srivastava

2015

Solid-State Electronics

View full text Add to dashboard Cite

“…Thus, it was deemed worthwhile to deposit protective layers over graphene without impairing its properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection for graphene [3,4]. …”

Section: Introductionmentioning

confidence: 99%

“…As an analogue of graphene, h-BN shows a minimal lattice mismatch with graphene of about 1.7%, yet has a wide band gap [5-8] and lower environmental sensitivity [3,4]. Hence, h-BN proves to be a promising dielectric material, or substrate, for two-dimensional electronic devices and especially for those based upon the use of graphene [9-13].…”

Section: Introductionmentioning

confidence: 99%

Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene

Yang

Zhang

et al. 2014

Nanoscale Res Lett

View full text Add to dashboard Cite

Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemical vapor deposition, using borazine as the precursor to h-BN. The h-BN nanosheets had a triangular morphology on a narrow graphene belt but a polygonal morphology on a larger graphene film. The h-BN nanosheets on graphene were highly crystalline, except for various in-plane lattice orientations. Interestingly, the h-BN nanosheets preferred to grow on graphene than on SiO2/Si under the chosen experimental conditions, and this selective growth spoke of potential promise for application to the preparation of graphene/h-BN superlattice structures fabricated on SiO2/Si.

show abstract

“…2(c), high-k oxide deposition on h-BN using ALD has already been achieved. 24,35 However, C TG for high-k on h-BN is still low due to the thickness of h-BN, 36,37 as shown in Fig. 4.…”

Section: Gate Stack Formation For 2d Channelsmentioning

confidence: 98%

Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance

Nagashio

2016

J. Mater. Res.

View full text Add to dashboard Cite

Recently, various two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides and so on, have attracted much attention in electron device research. The most important characteristic of graphene is its highest mobility of all semiconductor channels at room temperature. However, it is obvious that more than a good mobility characteristic is required to realize the field effect transistor (FET), and intense arguments from various points of view are necessary. In this paper, the issues with Si-metal oxide semiconductor FETs (Si-MOSFET) and the advantage of 2D materials are discussed. The present state of graphene FETs with respect to gate stack formation and band gap engineering is reported. Moreover, based on the density of states (DOS) of graphene extracted using the quantum capacitance (C Q ) measurement, it is shown that the electric band structure of graphene in contact with gate insulators or metal electrode deviates from its intrinsic band structure. I. ISSUES WITH Si-MOSFET AND THE ADVANTAGE OF 2D CHANNELSThe issues with the miniaturization of Si-MOSFETs are generically called short channel effects.1 When the source and drain depletion regions become comparable in length with the channel length, as shown in Fig. 1(a), the drain bias weakens the gate bias, which leads to a drastic increase in the off-current. Based on an analysis of the distribution of the electrical potential in the channel region, it is widely known that the short channel effect can be neglected when the channel length is ;6 times longer than the scaling length, k ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ffi e ch t ch t ox ð Þ = Ne ox ð Þ p , 2,3 where e ch , e ox , t ch , and t ox are the dielectric constants for the channel, the gate insulator, the thickness of the channel, and the gate oxide, respectively. Figure 1(b) shows the 6k values calculated for Si, carbon nanotubes (CNT), bilayer graphene, and MoS 2 , where the contribution of the tunneling effect is neglected. N is defined as the effective gate number: N 5 1 for planar, N 5 2 for dual gate, N 5 3 for FIN-FET, and N 5 4 for gate-all-around. Although the FIN structure has already been adopted for Si to reduce the short channel effects, 4 it is difficult to avoid the short channel effects for channel lengths shorter than 10 nm. 2D layered channels in FET applications are attractive because of their rigidly controllable atomic thickness (t ch , 1 nm) and their low dielectric constants where e ch 5 ;4 for a typical 2D layered channel. 3,4 This results in a 6k smaller than that of Si. Of course, Si channels of a few nanometers thick have already been constructed using the microfabrication process. However, the operation of Si-MOSFET with an atomic scale thickness is not realistic because the mobility is drastically reduced because of fabrication damage. 5,6 The advantage of 2D materials is their intrinsic atomic thickness, 7,8 which allows both the reduction of the short channel effect and

show abstract

Boron Nitride Film as a Buffer Layer in Deposition of Dielectrics on Graphene

Cited by 24 publications

References 47 publications

Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene

Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance

Contact Info

Product

Resources

About