Bottom Anti-Reflective Coatings for DUV Lithography.

Kang, Wenbing; Tanaka, Hatsuyuki; Kimura, Ken; Padmanaban, Munirathna; Kinoshita, Yoshiaki; Kudo, Takanori; Nozaki, Yuko; Pawlowski, Georg

doi:10.2494/photopolymer.10.471

Cited by 16 publications

(7 citation statements)

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“…Quite unusual, such a nitride film has a high electrical conductivity. In semiconductor industry, it has been used as an inorganic antireflective coating for lithography [90], hardmask for low-κ patterning [91,92], and diffusion barrier for tungsten contact and Cu interconnection [93,94].…”

Section: Ald Of P-type Metal Gatementioning

confidence: 99%

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Zhao

Xiang

2019

Applied Sciences

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The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

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Section: Ald Of P-type Metal Gatementioning

confidence: 99%

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Zhao

Xiang

2019

Applied Sciences

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“…1(e), is due to the vertical standing waves caused by the reflection from the bare silicon substrate [34]. To prevent generation of undesired patterns, anti-reflective coating is widely used where it controls the reflection of the laser light source at the surface of the substrate [35][36][37][38].…”

Section: Enhancement On Pattern Resolutionmentioning

confidence: 99%

Nanopatterning by Laser Interference Lithography: Applications to Optical Devices

Seo

Park²,

Kim

et al. 2014

j. nanosci. nanotech.

124

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A systematic review, covering fabrication of nanoscale patterns by laser interference lithography (LIL) and their applications for optical devices is provided. LIL is a patterning method. It is a simple, quick process over a large area without using a mask. LIL is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with LIL are the platform for further fabrication of nanostructures and growth of functional materials used as the building blocks for devices. Demonstration of optical and photonic devices by LIL is reviewed such as directed nanophotonics and surface plasmon resonance (SPR) or large area membrane reflectors and anti-reflectors. Perspective on future directions for LIL and emerging applications in other fields are presented.

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“…For absorbing materials, all ofthe variables above are generally complex numbers. The reflectance from the bottom layer into the resist is then given by Rb=r.r*, (4) and there no longer is an easy way to calculate the optimum conditions short of canying out a full evaluation of Eqs. (2).…”

Section: Theorymentioning

confidence: 99%

Bottom antireflective coatings for ArF, KrF, and i-line applications: a comparison of theory, design, and lithographic aspects

et al. 1999

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The present paper discusses theory, design and properties of bottom anti-reflective coatings (B.A.R.C.s) for deep Uv (193 and 248 nm) and i-line applications. All bottom anti-reflective coatings are interference devices (FabryPerot etalons), and as such their optical constants are optimal only for certain combinations of thickness and the real and imaginary parts of the refractive index. Maps of the optimality conditions in the parameter space will be provided. The design of B.A.R.C.s for various exposure wavelengths involves choosing the right dye molecules capable of highly absorbing at the particular wavelengths and optimizing the etch rates of the resulting films and fine tuning the formulations for best lithographic performance. At an exposure wavelength of 365 nm, dye compounds such as amino aromatic or azo type compounds can be used, for 248 nm it is necessary to use fused rings such as anthracene to have sufficient absorption, and in the case of 193 nm exposures simple benzene or phenolic compounds exhibit the required absorbance. Since the dye molecules are invariably aromatic or fused rings, it is necessary to balance the absorption property versus the etch rate by incorporating non-aromatic moieties. Further, the B.A.R.C. formulations need to be free from intermixing, formation of foot or undercut in order to obtain fine resist patterns. Our development efforts on B.A.R.C.s have lead to the AZ® EXP ArF, KrF and BARLi® series of B.A.R.C.s designed for 193, 248 and 365 nm wavelength exposures, respectively. Lithographic data of some of these products will also be presented with the emphasis on the AZ® EXP ArF-1 material designed for 193 nm exposure.

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Bottom Anti-Reflective Coatings for DUV Lithography.

Cited by 16 publications

References 0 publications

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Atomic Layer Deposition (ALD) of Metal Gates for CMOS

Nanopatterning by Laser Interference Lithography: Applications to Optical Devices

Bottom antireflective coatings for ArF, KrF, and i-line applications: a comparison of theory, design, and lithographic aspects

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