Bottom electrode crystallization of PZT thin films for ferroelectric capacitors

Mardare, Andrei Ionut; Mardare, Cezarina Cela; Joanni, Ednan

doi:10.1016/j.jeurceramsoc.2003.12.031

Cited by 8 publications

(4 citation statements)

References 17 publications

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“…In addition, not only the sputtering parameters, but also the nature of substrates has a vital role in the determination of crystalline and orientation [11][12]. Hence, the substrate selection is a crucial issue of achieving high-quality AlN films.…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate metals on the crystal growth of AlN films

Xiong

et al. 2010

Int J Miner Metall Mater

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AlN films were deposited by reactive radio frequency (RF) sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti, and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality AlN films and high-performance film bulk acoustic resonator (FBAR) may be attributed to the smaller lattice mismatch as well as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate.

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Section: Introductionmentioning

confidence: 99%

Influence of substrate metals on the crystal growth of AlN films

Xiong

et al. 2010

Int J Miner Metall Mater

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“…c Comparison of permittivity and T c among different ferroelectrics. PbZr x Ti 1− x O 3 [ 41 – 46 ], BaTiO 3 [ 47 – 49 ], SrBi 2 Ta 2 O 9 [ 50 ], BiFeO 3 [ 51 – 53 ], K x Na 1− x NbO 3 [ 54 , 55 ], Hf x Zr 1− x O 2 [ 56 – 58 ], AlScN [ 59 – 62 ], PVDF [ 63 – 66 ], molecular ferroelectric [ 67 , 68 ] …”

Section: History Of Ferroelectric Materials and Femmentioning

confidence: 99%

New-Generation Ferroelectric AlScN Materials

Zhang,

Zhu,

Tian

et al. 2024

Nano-Micro Lett.

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Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.

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“…Sakaliuniene et al have also shown that film porosity is reduced and therefore that the resistivity decreases from 85 to 25 µΩ cm when the argon pressure is reduced from 5 to 0.6 Pa [3]. In addition, it has been shown that the deposition temperature of these electrodes has a strong influence on the crystalline quality of the Pt film and thus on the electrical properties of the MFM stack [4][5][6][7][8]. Indeed, the well-ordered structure of the Pt electrode promotes crystal growth of the oxide ferroelectric film.…”

Section: Introductionmentioning

confidence: 99%

Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

et al. 2020

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The decrease of the growth temperature of platinum (Pt) thin film on silicon substrate was studied using Ca 2 Nb 3 O 10 nanosheets (CNOns) as seed layer. These nanosheets were obtained by the delamination of the layered perovskite KCa 2 Nb 3 O 10 and they were deposited on silicon substrates by the Langmuir-Blodgett method. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO 2 /Si), and on TiO 2 /SiO 2 /Si substrates for comparison, at temperatures ranging from room temperature up to 625 °C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Highly (111) textured Pt thin films were obtained on CNOns/SiO 2 /Si at substrate temperature as low as 200 °C. The full width at half maximum of the rocking curve of the (111) X-ray peak was about one degree, indicating a high crystalline orientation. The resistivity was measured at room temperature by the four point probes method to confirm the quality of Pt thin films elaborated at low temperatures. These results pave the way for easier integration of highly textured platinum thin film in low temperature microelectronic processes.

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Bottom electrode crystallization of PZT thin films for ferroelectric capacitors

Cited by 8 publications

References 17 publications

Influence of substrate metals on the crystal growth of AlN films

Influence of substrate metals on the crystal growth of AlN films

New-Generation Ferroelectric AlScN Materials

Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

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