Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition

Nakayama, Masaaki; Ichida, Hideki; Nishimura, Hitoshi

doi:10.1088/0953-8984/11/39/320

Cited by 45 publications

(65 citation statements)

References 18 publications

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“…The Z 1,2 and Z 3 excitons originate from the coupling of the lowest conduction-band state ⌫ 6 to both the uppermost valence-band holes ⌫ 8 ͑Z 1,2 ͒ and ⌫ 7 ͑Z 3 ͒, respectively. 28,45 The energy values of 3.34 eV ͑ ϳ 372 nm͒ for the Z 1,2 exciton and 3.27 eV ͑ ϳ 380 nm͒ for the Z 3 exciton are in close agreement with the values reported by other authors for room-temperature CuCl absorption measurements. 45,46 The absorption spectrum of an uncapped CuCl sample measured 7 days after deposition is shown in Fig.…”

Section: Resultssupporting

confidence: 90%

“…Research on the cuprous halides has focused on three main thrusts over the past decade: ͑1͒ spectroscopic and theoretical studies of band structures and excitonic-based luminescence in CuCl and CuBr, [27][28][29][30][31] ͑2͒ fundamental photoluminescence studies of CuCl quantum dots/nanocrystals embedded in NaCl crystals, [32][33][34] and ͑3͒ fundamental surface studies of the growth mechanisms involved in the heteroepitaxy of CuCl single crystals on a number of substrates. [35][36][37][38][39][40] One group of researchers has examined the surface growth mechanisms in the heteroepitaxy of CuCl on both Si and GaAs substrates by molecular-beam epitaxy.…”

Section: Introductionmentioning

confidence: 99%

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Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ␥-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si ͑100͒ or Si ͑111͒, reveal a strong room-temperature Z 3 excitonic emission at ϳ387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of ␥-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the ␥-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ϳ380 and ϳ387 nm are mediated by excitonic effects.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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“…9 The binding energy is very high compared with other blue optoelectronic materials such as GaN ͑25 meV͒ 10 and ZnO ͑60 meV͒. 11 The high exciton binding energy, the exciton emission in UV, and the close lattice matching with Si make CuCl a potential candidate for Si based UV/blue emitting devices.…”

Section: Introductionmentioning

confidence: 99%

Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

Natarajan

Daniels

Cameron

et al. 2006

Journal of Applied Physics

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Copper ͑I͒ chloride ͑CuCl͒ is a potential candidate for ultraviolet ͑UV͒ optoelectronics due to its close lattice match with Si ͑mismatch less than 0.4%͒ and a high UV excitonic emission at room temperature. CuCl thin films were deposited using radio frequency magnetron sputtering technique. The influence of target to substrate distance ͑d ts ͒ and sputtering pressure on the composition, microstructure, and UV emission properties of the films were analyzed. The films deposited with shorter target to substrate spacing ͑d ts =3 cm͒ were found to be nonstoichiometric, and the film stoichiometry improves when the substrate is moved away from the target ͑d ts = 4.5 and 6 cm͒. A further increase in the spacing results in poor crystalline quality. The grain interface area increases when the sputtering pressure is increased from 1.1ϫ 10 −3 to 1 ϫ 10 −2 mbar at d ts = 6 cm. Room temperature cathodoluminescence spectrum shows an intense and sharp UV exciton ͑Z 3 ͒ emission at ϳ385 nm with a full width at half maximum of 16 nm for the films deposited at the optimum d ts of 6 cm and a pressure of 1.1ϫ 10 −3 mbar. A broad deep level emission in the green region ͑ ϳ515 nm͒ is also observed. The relative intensity of the UV to green emission peaks decreased when the sputtering pressure was increased, consistent with an increase in grain boundary area. The variation in the stoichiometry and the crystallinity are attributed to the change in the intensity and energy of the flux of materials from the target due to the interaction with the background gas molecules.

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“…Zincblende -CuCl is a direct band gap (~3.39 eV at room temperature) compound semiconductor with much larger excitonic binding energy (~ 190 meV) [3] when compared to the III-N [4] and ZnO [5] semiconductors. This high binding energy of CuCl guarantees excitonic luminescence at room temperature and beyond.…”

Section: Introductionmentioning

confidence: 99%

Zn Doped Nanocrystalline CuCl Thin Films for Optoelectronic Applications

et al. 2010

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We report on the use of Zn as an n-type dopant in CuCl thin films for optoelectronic applications, wherein maximum n-type doping of the order of 10 18 cm -3 has been achieved. Zn doped nanocrystalline CuCl thin films are successfully deposited on glass and Si substrates by pulsed dc magnetron sputtering. Structural and morphological properties are investigated using X-ray diffraction (XRD) studies and Scanning Electron Microscopy (SEM), respectively. The conductivity of the CuCl:Zn films is examined using the four point probe technique. An order of magnitude increase in the conductivity of CuCl, by the doping with Zn is reported herein. The doped CuCl films display strong room temperature cathodoluminescence (CL) at ~ 385nm, which is similar to that of the undoped films. Hall Effect measurements show an n-type conductivity of the doped films.

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Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition

Cited by 45 publications

References 18 publications

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

Growth of CuCl thin films by magnetron sputtering for ultraviolet optoelectronic applications

Zn Doped Nanocrystalline CuCl Thin Films for Optoelectronic Applications

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