Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly, Lisa; Lucas, O. F.; McNally, Patrick J.; Reader, A. H.; Natarajan, Gomathi; Daniels, Stephen; Cameron, D.C.; Mitra, Anirban; Martinez-Rosas, M.; Bradley, A. Louise

doi:10.1063/1.2138799

Cited by 32 publications

(22 citation statements)

References 49 publications

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“…In order to make an assessment of the luminescence properties the measurements are placed in the context of previously reported measurements on thin film CuCl on other substrates and single crystal CuCl. Electroluminescence from our γ-CuCl on Si structures has also been observed [20].…”

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confidence: 80%

Optical properties of CuCl films on silicon substrates

Mitra

O'Reilly

Lucas

et al. 2008

Physica Status Solidi (b)

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Semiconductor photonic emitters operating in the UV range remain an elusive goal. Attention has focused mainly on III‐Nitrides. However a large lattice constant difference between the III‐Nitride layers and compatible substrates results in high densities of misfit dislocations and consequently the device performance is adversely affected. An alternative novel material system, γ‐CuCl on silicon, is investigated. Properties of the exciton luminescence from vacuum deposited CuCl films on Si(100) and Si(111) are studied using temperature dependent photoluminescence (PL) spectroscopy. Four peaks attributed to the free exciton (Z3) (3.203 eV), bound exciton (I1) (3.181 eV), bi‐exciton (M) (3.159 eV) and bound bi‐exciton (N1) (3.134 eV) are identified from the PL spectrum at 10 K. A free exciton peak at 3.230 eV is observed at room temperature. The binding energies for the bound exciton, bi‐exciton and bound bi‐exciton are determined. Parameters, extracted from the temperature dependence of the Z3 PL peak intensity, energy and line‐width, have been compared with CuCl films on different substrates and in single crystal form. The luminescence properties of the CuCl on Si material system are found to compare well with reports for single crystal CuCl. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 80%

Optical properties of CuCl films on silicon substrates

Mitra

O'Reilly

Lucas

et al. 2008

Physica Status Solidi (b)

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“…This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ-CuCl on Si(100) and Si(111) using vacuum-based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques.…”

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confidence: 99%

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Cowley

Foy

Danilieuk

et al. 2009

Physica Status Solidi (a)

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Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300–400 nm spectral range. Current materials being used for such devices are typically based on II–VI and III‐nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III‐N devices is lattice mismatch‐induced high dislocation densities for epitaxially grown layers on non‐native substrates. γ‐CuCl is a direct bandgap material and an ionic wide bandgap I–VII semiconductor with a room temperature free exciton binding energy of ∼190 meV (compared to ∼25 meV and ∼60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (λ ∼ 366 nm). The lattice constant of γ‐CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ‐CuCl on Si(100) and Si(111) using vacuum‐based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite‐zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux‐driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X‐ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X‐ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Based on our experience of deposition of polycrystalline vacuum evaporated CuCl films on glass substrates [5,6,25], CuCl grows preferentially in the (111) orientation, which is the case for the co-evaporated films reported in this study. The room temperature UV-VIS absorption spectra of all films were dominated by the contribution of both high and low excitonic bands, historically called the Z 12 and Z 3 excitons, respectively.…”

Section: Resultsmentioning

confidence: 89%

“…There have been several reports of high quality deposition of CuCl films by many authors, including our group [5,6] and by other workers [7]. However despite the large free excitonic binding energy of CuCl, the luminescence intensities appear to be weak when compared to mature optical emitters such as GaAs or GaN for which consistent high quality room temperature electroluminescence, spontaneous emission and lasing could be demonstrated.…”

Section: Introductionmentioning

confidence: 95%

Structural, optical and electrical properties of Co‐evaporated CuCl/KCl films

Lucas

McNally

Cowley

et al. 2009

Phys. Status Solidi (c)

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The behaviour of co‐evaporated CuCl/KCl films, with a varying weight percentage of KCl from 0% – 15%, has been investigated using structural, optical and electrical characterisation techniques. Room temperature X‐ray diffraction (XRD) measurements reveal that the deposited films on glass substrates were zincblende in structure and preferentially oriented in the CuCl (111) plane irrespective of the percentage of KCl. Temperature dependent photoluminescence (PL) measurements on all samples exhibit various excitonic luminescence processes. Further to this, the normalized peak intensity (Z3 ∼ 384 nm) of the 95% CuCl/5% KCl evaporated film is twice that of undoped film due to possible filling of some of the anion vacancies which may reduce the luminescence intensity of the film. The conductivity of the deposited films was found to increase with increasing KCl content. An interstitial hopping mechanism of K+ in a predominantly CuCl crystal was used to explain the increase in the electrical conductivity of the co‐evaporated films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

Cited by 32 publications

References 49 publications

Optical properties of CuCl films on silicon substrates

Optical properties of CuCl films on silicon substrates

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Structural, optical and electrical properties of Co‐evaporated CuCl/KCl films

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