1997 IEEE International SOI Conference Proceedings
DOI: 10.1109/soi.1997.634953
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Breakdown analysis in JI, SOI and partial SOI power structures

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Cited by 45 publications
(15 citation statements)
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“…A solution to overcome the weaknesses in SOI devices was later proposed [82] which combined the advantages of SOI and JI technologies, known as PSOI. Unlike the SOI devices, the potential lines were no longer crowded in the n-drift region but extended into the substrate during the off-state condition through the silicon window into the BOX, leading to high BV in PSOI devices.…”
Section: Partial Isolation Soi (Psoi) Ligbtmentioning
confidence: 99%
“…A solution to overcome the weaknesses in SOI devices was later proposed [82] which combined the advantages of SOI and JI technologies, known as PSOI. Unlike the SOI devices, the potential lines were no longer crowded in the n-drift region but extended into the substrate during the off-state condition through the silicon window into the BOX, leading to high BV in PSOI devices.…”
Section: Partial Isolation Soi (Psoi) Ligbtmentioning
confidence: 99%
“…1. Junction Isolation is associated with the bulk silicon technology [2]. In this technology devices are electrically isolated from each other through reverse biased p-n junction.…”
Section: Adopted Technologies and Device Structuresmentioning
confidence: 99%
“…In this technology, the doping concentration of the drift layer is higher than the JI technology and the PTop layer's presence helps to deplete the drift layer so that an equal off-state performance to the JI technology can be achieved. In classical SOI technology [2] the breakdown voltage is supported across the buried oxide rather than in the substrate and thus it has an un-even potential distribution causes a lower breakdown voltage than those of the JI and double-RESURF technologies. Partial SOI technology [2] solves the low breakdown voltage problem of classical SOI.…”
Section: Adopted Technologies and Device Structuresmentioning
confidence: 99%
“…However, there are some inherent weaknesses in the structure of the SOI LIGBT [2][3][4][5] such as self heating and limitation of breakdown voltage (BV) by buried oxide (BOX) thickness. The partial SOI (PSOI) concept was subsequently proposed [6,7] featured with devices sitting on a SOI wafer but the voltage can be partly supported by the handle wafer to suppress the crowding of the potential lines in the confined silicon and to reduce self-heating in SOI technology. The first design of PSOI has an interrupted oxide in the buried oxide layer to allow extension of depletion region into the handle wafer while the later design applies extra buried junction to help to deplete the handle wafer.…”
Section: Introductionmentioning
confidence: 99%