Technology-Based Static Figure of Merit for High Voltage ICs

Abstract

This paper introduces for the first time a technology-based static figure of merit (FOM) for lateral high voltage MOSFETs (LDMOSFETs). Established figures of merit in the power semiconductor arena take into account material properties only. Here we show that the static performance of lateral power devices is very significantly influenced by the power IC technologies. Hence we develop a technology FOM that couples the breakdown voltage with the specific on-state resistance. The FOM is based on numerical simulation results and verified with the reported experimental data from different JI and SOI technologies.

On the static performance of the RESURF LDMOSFETS for power ICs

“…Since the triangular distribution of the electric field does not apply to the lateral devices, a different relation needs to be devised. Different 2D numerical simulations have been performed using ISE-TCAD, in order to obtain the optimized sRon as a function of BV for the considered technologies [6]. Fig.…”

“…First order analytical models for the BV vs. sRon power law, valid for various RESURF LDMOS technologies are presented in this section. The analytical models use 1D Poisson theory [2] to relate the triangular electric field distribution in a voltage blocking drift region to the drift layer doping and other material constants as shown in (5), (6). For a lateral RESURF device, (neglecting the 2D effects) the sRon equation is:…”