Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

“…The high temperature sputtering process therefore had a negative impact on both the channel sheet resistance and the ohmic contact resistance. shows the simulated electric field profile at the corner of the gate electrode along a cutline drawn through the high-k gate dielectric, (f) Benchmark plot comparing this result with previous 𝛽-Ga2O3 transistor reports 20,23,29,30,[37][38][39] .…”

Section: Device Characteristicsmentioning

confidence: 87%

“…An easier approach is to increase the charge density in the channel, especially in lateral field effect transistors. Most of the high voltage lateral field effect transistors reported in 𝛽-Ga2O3 20,29,30 use low channel charge density (< 10 13 cm -2 ) leading to high 𝑅 𝑜𝑛 and low power figure of merit. To more carefully understand the need for higher channel charge density, consider the case of a lateral field effect transistor at the breakdown condition.…”

mentioning

confidence: 99%

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

Kalarickal

Feng

Bhuiyan

et al. 2021

IEEE Trans. Electron Devices

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The performance of ultra-wide band gap materials like 𝛽-Ga2O3 is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO3 can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (𝐿 𝑔𝑑 ) of 6 𝜇m and 0.6 𝜇m respectively in 𝛽-Ga2O3, at a high channel sheet charge density of 1.8 × 10 13 cm -2 . The high sheet charge density together with high breakdown field enabled a record power figure of merit (𝑉 𝑏𝑟 2 /𝑅 𝑜𝑛 ) of 376 MW/cm 2 at a gate-drain spacing of 3 𝜇m.Low loss power switching devices were mostly based on Si until the introduction of wide band gap semiconductors like SiC (3.2 eV, Fbr=2.5 MV/cm) and GaN (3.4 eV, Fbr=3 MV/cm). The much larger breakdown field strength in these semiconductors offered the possibility of shrinking the active drift region thickness for the same breakdown voltage resulting in much lower on resistance (𝑅 𝑜𝑛 ). This improvement in the performance of power switching devices on breakdown field is well described by the power figure of merit 1 (BFOM-𝜖𝜇𝐹 𝑏𝑟 3 ), where 𝜖, 𝜇 and 𝐹 𝑏𝑟 represent dielectric permittivity, carrier mobility and breakdown field strength respectively.With a theoretical breakdown field strength (8 MV/cm) 2,3 much higher than GaN and SiC, 𝛽-Ga2O3 offers a new material platform for improving the performance metrics of such devices. In addition to the large breakdown field strength, the availability of bulk substrates grown from melt 4-7 makes 𝛽-Ga2O3 highly attractive since this

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“…Highperformance lateral transistors up to 8 kV breakdown voltage have been demonstrated. [66,[71][72][73][74] As the voltage rating increases, vertical transistors provide significantly improved on-resistance and breakdown voltage trade-off compared to lateral transistors due to the vertical separation of source and drain, instead of lateral. Also, high electric fields occurring in the bulk rather than on the surface also help with the dynamic operation and reduce trapping in these vertical devices.…”

Section: Vertical Ga 2 O 3 Power Transistorsmentioning

confidence: 99%

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges

Gupta

Pasayat

2022

Physica Status Solidi (a)

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Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) are rapidly making inroads into the power semiconductor markets dominated by the incumbent silicon (Si). However, the performance of these WBG semiconductors has not reached the ideal material limits and thus, leaves significant room for improvement. In this regard, for medium voltage (600–1700 V)/high current (>50 A) applications, with a high Baliga figure of merit (BFOM) and architectural advantages, vertical GaN offers a highly energy‐efficient solution. Similarly, for high‐voltage applications (>1700 V), ultrawide bandgap (UWBG) semiconductors with their high BFOM present a strong case. Gallium oxide (Ga2O3) has emerged as the UWBG material for next‐generation power electronics. Together vertical GaN and vertical Ga2O3 have the potential to serve a large range of power switching applications. These technologies are both at different junctures and face different challenges to become commercially viable. Herein, a comprehensive review of all major vertical GaN and Ga2O3 power transistors is provided while discussing their features, advantages, and challenges that need to be solved. Finally, the critical material and device advancements that are needed to push these technologies further are also discussed.

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Breakdown Characteristics of $\beta$ -(Al_0.22Ga_0.78)₂O₃/Ga₂O₃ Field-Plated Modulation-Doped Field-Effect Transistors

Cited by 91 publications

References 29 publications

High shear in situ exfoliation of 2D gallium oxide sheets from centrifugally derived thin films of liquid gallium

High shear in situ exfoliation of 2D gallium oxide sheets from centrifugally derived thin films of liquid gallium

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges

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Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

Cited by 91 publications

References 29 publications

High shear in situ exfoliation of 2D gallium oxide sheets from centrifugally derived thin films of liquid gallium

High shear in situ exfoliation of 2D gallium oxide sheets from centrifugally derived thin films of liquid gallium

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

Vertical GaN and Vertical Ga2O3Power Transistors: Status and Challenges

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Product

Resources

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Breakdown Characteristics of $\beta$ -(Al_0.22Ga_0.78)₂O₃/Ga₂O₃ Field-Plated Modulation-Doped Field-Effect Transistors

Vertical GaN and Vertical Ga₂O₃Power Transistors: Status and Challenges