Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage

Stathis, J. H.; Vayshenker, A.; Varekamp, P.; Wu, Ernest Y.; Montrose, C. J.; McKenna, J.; DiMaria, D. J.; Han, Liang; Cartier, E.; Wachnik, R.; Linder, B.

doi:10.1109/vlsit.2000.852783

Cited by 19 publications

(12 citation statements)

References 4 publications

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“…Fig. 15(b) also shows that data from different labs [112], [123], [130] are in reasonable agreement, taking into account the differences in oxide thickness, indicating little dependence on processing for state-of-the-art facilities.…”

Section: Althoughmentioning

confidence: 55%

“…In spite of this tendency, the ultrathin oxide samples stressed at lower voltage reach a higher average value of before breakdown. Therefore, while the measured may underestimate , the observed increase at low voltage is real and correlates with an increase in charge-to-breakdown at low voltage [123].…”

Section: The Critical Defect Densitymentioning

confidence: 84%

“…In particular, there is no large discontinuity or change in slope at the transition from Fowler-Nordheim to direct tunneling at about 3 V. This is contrary to earlier suggestions [128], [129] that breakdown would be strongly suppressed in the direct tunneling regime and strongly suggests that the relevant energy scale is the electron energy in the anode, which is the poly-silicon gate or the silicon substrate depending on injection polarity. Although the rate of defect generation decreases approximately exponentially with supply voltage below a threshold voltage of about 5 V for hot electron-induced hydrogen release, detailed measurements [123], [127] have found an inflection in the voltage dependence of between 2-3 V. This is shown in Fig. 14.…”

Section: Defect Generation Ratementioning

confidence: 91%

“…Published models [69], [104], [111], [112], [123] have indicated that, for the oxides used in the past with -nm, intrinsic gate oxide reliability has probably not been a real issue. However, the time is near when it will no longer be possible to meet reliability specifications for ultrathin gate oxides, although the exact point when this will happen is the subject of considerable debate.…”

Section: Functional Reliabilitymentioning

confidence: 99%

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Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Stathis

2001

IEEE Trans. Device Mater. Relib.

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163

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Abstract-The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2 nm. This paper will review the physics and statistics of dielectric wearout and breakdown in ultrathin SiO 2 -based gate dielectrics. Electrons or holes tunneling through the gate oxide generate defects until a critical density is reached and the oxide breaks down. The critical defect density is explained by the formation of a percolation path of defects across the oxide. Only 1% of these paths ultimately lead to destructive breakdown, and the microscopic nature of these defects is not known. The rate of defect generation decreases approximately exponentially with supply voltage, below a threshold voltage of about 5 V for hot electron-induced hydrogen release. However, the tunnel current also increases exponentially with decreasing oxide thickness, leading to a decreasing time-to-breakdown and a diminishing margin for reliability as device dimensions are scaled. Estimating the reliability of the dielectric requires an extrapolation from the measurement conditions (e.g., higher voltage) to operation conditions. Because of the diminished reliability margin, it has become imperative to try to reduce the error in this extrapolation.Long-term ( 1 year) stress experiments are now being used to measure the wearout and breakdown of ultrathin ( 2 nm) dielectric films as close as possible to operating conditions. These measurements have revealed the details of the voltage dependence of the defect generation rate and critical defect density, allowing better modeling of the voltage dependence of the time-to-breakdown. Such measurements are used to guide the technology development prior to the manufacturing stage. We then discuss the nature of the electrical conduction through a breakdown spot and the effect of the oxide breakdown on device and circuit performance. In some cases, an oxide breakdown does not lead to immediate circuit failure, so more research is needed in order to develop a quantitative methodology for predicting the reliability of circuits.

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Section: Althoughmentioning

confidence: 55%

Section: The Critical Defect Densitymentioning

confidence: 84%

Section: Defect Generation Ratementioning

confidence: 91%

Section: Functional Reliabilitymentioning

confidence: 99%

See 2 more Smart Citations

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Stathis

2001

IEEE Trans. Device Mater. Relib.

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163

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“…Recently, it has been reported that was increased for very long stress times [67] and under alternating bias stress [68]. Other reports indicated a decreasing for decreasing stress voltage [35], [69], [70].…”

Section: A the Weibull Distribution And Percolation Theorymentioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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Abstract-The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO 2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.

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Analysis of the design space available for high-kgate dielectrics in nanoscale MOSFETs

Frank

Wong

2000

Superlattices and Microstructures

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Breakdown measurements of ultra-thin SiO/sub 2/ at low voltage

Cited by 19 publications

References 4 publications

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Analysis of the design space available for high-kgate dielectrics in nanoscale MOSFETs

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