Breakdown voltage enhancement in field plated AlGaN/GaN-on-Si HFETs using mesa-first prepassivation process

Park

et al. 2012

Appl. Phys. Express

We have demonstrated state-of-the-art characteristics of AlGaN/GaN-on-Si heterojunction field effect transistors (HFETs) employing dual field plates. Both gate and drain field plate lengths were optimized in order to maximize the breakdown voltage. Great care was taken not only to optimize the field plate lengths but also to develop processing technologies such as mesa-first prepassivation, a recessed ohmic contact, and a sloped gate. A breakdown voltage of 1590 V with a specific on-resistance of 1.86 m cm 2 was achieved for the gate-to-drain distance of 15 m in which the gate and drain field plate lengths were 2 and 1 m, respectively. #

mentioning

confidence: 99%

State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates

Park

et al. 2012

Appl. Phys. Express

“…The memory device was fabricated as follows. First, mesa isolation was performed using BCl 3 /Cl 2 ‐based inductively coupled plasma reactive ion etching [11]. The upper GaN storage node was defined by the same etching recipe used for the mesa isolation.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Nonvolatile memory device based on SiO ₂ /GaN/AlGaN/GaN heterostructure

et al. 2013

Demonstrated is a nonvolatile memory device based on a SiO 2 /GaN/ AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO 2 layer acted as a blocking layer. The threshold voltage shift was ∼ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s. Generation Data Center' IT R&D project (no. 10038766) of MKE/ KEIT.

“…A mesa-first prepassivation process was employed for device fabrication [15]. A low-damage Cl 2 /BCl 3 -based inductively coupled plasma reactive ion etching (ICPRIE) method was used for mesa isolation.…”

Section: Device Fabrication and Characterizationmentioning

confidence: 99%

Schottky barrier diode embedded AlGaN/GaN switching transistor

Park

Semicond. Sci. Technol.

et al. 2013

We developed a Schottky barrier diode (SBD) embedded AlGaN/GaN switching transistor to allow negative current flow during off-state condition. An SBD was embedded in a recessed normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET). The fabricated device exhibited normally-off characteristics with a gate threshold voltage of 2.8 V, a diode turn-on voltage of 1.2 V, and a breakdown voltage of 849 V for the anode-to-drain distance of 8 μm. An on-resistance of 2.66 m cm 2 was achieved at a gate voltage of 16 V in the forward transistor mode. Eliminating the need for an external diode, the SBD embedded switching transistor has advantages of significant reduction in parasitic inductance and chip area.