Nonvolatile memory device based on SiO ₂ /GaN/AlGaN/GaN heterostructure

Abstract

Demonstrated is a nonvolatile memory device based on a SiO 2 /GaN/ AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO 2 layer acted as a blocking layer. The threshold voltage shift was ∼ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s. Generation Data Center' IT R&D project (no. 10038766) of MKE/ KEIT.

Non‐volatile memory operation in normally‐off GaN MOS heterostructure field effect transistors with thin AlGaN barrier

“…The charge storage in AlGaN/ GaN-based metal floating gate devices, which enabled normally-off operation, was recently reported [3,4]. GaN capping layer was used as charge storage layer for non-volatile memory operation [5].…”

Low leakage current AlGaN/GaN on Si-based Schottky barrier diode with bonding-pad electrode mesa etching

“…1,2) Various gallium nitride (GaN) power devices have been reported for high-power devices because of its intrinsic material properties such as wide bandgap, high electron peak velocity, and high power densities. [3][4][5] In particular, GaN power devices are coming to the fore in high-power switching applications, such as inverters and converters, owing to their good power conversion efficiencies, superior power densities, and fast switching speeds in comparison with Si-based power devices. [6][7][8] The GaN power device switching speed is high enough to reduce the size and the complexity of a power conversion system, and its high power density and low leakage current enhance the power conversion efficiency.…”