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Demonstrated is a nonvolatile memory device based on a SiO 2 /GaN/ AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO 2 layer acted as a blocking layer. The threshold voltage shift was ∼ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s. Generation Data Center' IT R&D project (no. 10038766) of MKE/ KEIT.