Prepassivated AlGaN/GaN HEMTs with improved edge acuity in annealed ohmic contacts

State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates

“…The SiN x contact opening was etched using a CF 4 /O 2 -based ICP RIE process 18) and thereafter the GaN/AlGaN surface was etched by 110…”

“…For the source and drain contact formation, a recessed ohmic contact was used to reduce the contact resistance. The SiN x contact opening was etched using a CF 4 /O 2 -based ICP RIE process 18) and thereafter the GaN/AlGaN surface was etched by 110…”