A new concept of a tunneling oxide-free nonvolatile memory device with a deep trap interface floating gate is proposed. This device demonstrates a high on/off current ratio of 10 and a sizable memory window due to deep traps at the interface between the channel and gate dielectric layers. Interestingly, irradiation with 400 nm light can completely restore the program state to the initial one (performing an erasing process), which is attributed to the visible light-sensitive channel layer. Device reproducibility is enhanced by selectively passivating shallow traps at the interface using in situ H plasma treatment. The passivated memory device shows highly reproducible memory operation and on-state current during retention bake tests at 85 °C. One of the most significant advantages of this visible light-erasable oxide field-effect transistor-based nonvolatile memory is its simple structure, which is free from deterioration due to the frequent tunneling processes, as compared to conventional nonvolatile memory devices with tunneling oxides.

A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm 2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-ON voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82 µA/mm at −15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC. Index Terms-AlGaN/GaN on Si, Schottky barrier diode (SBD), recess dual anode metal, low turn-on voltage. I. INTRODUCTIONG ALLIUM nitride (GaN) power devices are drawing greater attention in high-power switching applications owing to their superior power density, efficiency, and switching speed [1]. To achieve high efficiency and a small size in a power-conversion system, a low turn-on voltage (V T ), low on-resistance (R on ) and low reverse recovery of the diode are very important [2]. Various technologies to improve the performance of an SBD have recently been studied. Researches to reduce on-resistance and to reduce surface leakage current, such as SiO 2 , SiN x , Al 2 O 3 dielectric film, have been investigated [3]. In addition, studies on recess etching in the anode region and recess depth control have been actively conducted owing to the capability of recessed SBDs to reduce the V T without an increase in the leakage current [4]-[6]. However, for large device fabrication, the dry etch conditions including a uniform etch profile, a reproducible etch rate, and a small amount of plasma damage are very difficult and Manuscript

A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.

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Generalized principal models on non-semisimple groups are defined. An ansatz for the Lax form of the equations of motion is chosen and models on two-and three-dimensional non-semisimple groups that admit this Lax formulation are classified. Only one of these models has truly nonlinear equations of motion, and the Lax pair is explicitly given. The equations of motion of all the other models can be brought to linear partial differential equations.