Breakdown voltage enhancement of gate field plate Al<sub>0.295</sub>Ga<sub>0.705</sub>N/GaN HEMTs

Murugapandiyan, P.; Hasan, Md. Tanvir; Lakshmi, V. Rajya; Wasim, Mohammad; Ajayan, J.; Ramkumar, Nirupama; Nirmal, D.

doi:10.1080/00207217.2020.1849819

Cited by 10 publications

(7 citation statements)

References 31 publications

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“…The parameters are obtained from. 14,18,22,23,[26][27][28] The maximum power handling capability of the HEMT depends on the breakdown voltage of the device.…”

Section: Resultsmentioning

confidence: 99%

“…The field plate techniques improve the breakdown voltage by reshaping the electric field. 22 The breakdown voltage dependence on gate to drain distance (L GD ) is plotted in Figure 9. The gate field plate AlGaN double channel HEMT demonstrated outstanding breakdown characteristics (V BR = 695 V) due to ultra-wide bandgap channel along with field plate structure.…”

Section: Resultsmentioning

confidence: 99%

“…AlGaN/GaN/InGaN/GaN heterostructure device enhanced the electron confinement in the channel and demonstrated 41% power added efficiency at 2 GHz. 22 In this work, we proposed a gate field plate Al 0.1 Ga 0.9 N double channel HEMT with Al 0.1 Ga 0.9 N as buffer layer and the device performance is analyzed through the results obtained from device simulation using ATLAS technology computer aided design (TCAD). The field plate gate AlGaN double channel HEMT improved the device DC and RF performance.…”

Section: Introductionmentioning

confidence: 99%

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Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications

Natarajan

Parthasarathy

Murugapandiyan

2022

Int J RF Mic Comp-Aid Eng

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This article reports the performance analysis of gate field plate AlGaN dual channel high electron mobility transistor (HEMT). The proposed Al 0.31 Ga 0.69 N/Al 0.1 Ga 0.9 N/Al 0.31 Ga 0.69 N/Al 0.1 Ga 0.9 N heterostructures creates two quantum wells. Due to the strong coupling between two channels, device shown improved 2DEG (two-dimensional electron gas), and enhanced carrier confinement. A distinct double-hump feature is observed in both DC and RF characteristics of the proposed HEMT. For L G = 0.8 μm, gate field plate (L FP = 0.5 μm), double channel HEMT shows the breakdown voltage of 695 V and F T /F MAX of 30/70 GHz. Moreover, the AlGaN double channel HEMT showed a ON-state current density (I DS ) of 0.7 A/mm, transconductance (G m ) of 117 mS/mm, and lower noise figure. The proposed AlGaN channel HEMT in this work is suitable for future high-power K-band microwave applications.

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“…The parameters are obtained from. 14,18,22,23,[26][27][28] The maximum power handling capability of the HEMT depends on the breakdown voltage of the device.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications

Natarajan

Parthasarathy

Murugapandiyan

2022

Int J RF Mic Comp-Aid Eng

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“…The cut-off frequencies f T and f max were calculated by extrapolation of current gain and unilateral power gain frequency plots at a slope of −20 dB/dec until the 0 dB line. 8,28,40 f T /f max for GFP (GGFP) HEMT is 17.6/44 (28.3/80) GHz depicting a 60% and 81% increase in cut-off frequencies of the proposed device, respectively. Some similar methodological work is also reported earlier in 13,21,29 where various gate structure configurations are studied for DC and RF performance, though with different gate lengths of 0.5 μm and 0.7 μm .…”

Section: Effect Of Variations In L Gd On C Gs and C Gdmentioning

confidence: 98%

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Bhat

Shafi

Sahu

et al. 2021

J. Electron. Mater.

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This paper investigates the DC and RF performance of a gate field plate (GFP) and proposed grated gate field plate (GGFP) AlGaN/GaN high electron mobility transistor (HEMT) with a gate length of 0.25 μ m through experimentally calibrated simulations. The GFP HEMT technology enhances breakdown voltage but influences the capacitive nature of the device with parasitic capacitance, particularly Miller's capacitance, into action reducing its radio frequency and switching performance. To improve the electrical operation of a GFP HEMT, a grated gate field plate (GGFP) HEMT structure is proposed which exhibits operational improvements in terms of output current (1 A/mm), transconductance (350 mS/mm), and at the same time, reduces the parasitic capacitance effectively. We observe a 60% improvement in cut off frequency of the proposed GGFP HEMT (28.3 GHz) with respect to GFP HEMT (17.6 GHz) with little decrease in breakdown voltage. This study shows that the proposed device structure (GGFP HEMT) due to its effective capacitance reduction has better suitability and is a viable technique for future radio frequency applications.

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“…The Selberherr's impact ionization model considered for device breakdown simulation [32] and the impact ionization carrier generation rate described as follows:…”

Section: Simulation Modelsmentioning

confidence: 99%

Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate

Natarajan

Parthasarathy

2021

Silicon

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In this paper, electrical and microwave characteristics of Al0.1Ga0.9N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 µm, gate to drain distance LGD = 1 µm, and HfO2(SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93( 95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The proposed device DC characteristics are validated with reported expeimental work, which shows similar IDS and 54% and and 31% improvement in breakdown voltage on comparisons with conventional HEMT.

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Breakdown voltage enhancement of gate field plate Al_0.295Ga_0.705N/GaN HEMTs

Cited by 10 publications

References 31 publications

Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications

Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate

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Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs

Cited by 10 publications

References 31 publications

Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications

Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate

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Breakdown voltage enhancement of gate field plate Al_0.295Ga_0.705N/GaN HEMTs

Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications

Ultra‐wide bandgap Al _0. ₁ Ga ₀ _. ₉ N double channel HEMT for RF applications