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We report direct current (DC) and microwave performance of a 50-nm gate length (L g) quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC substrate with SiN passivation and by using a Tgate. The proposed HEMT structure is simulated using industry-standard Synopsys Sentaurus technology computer-aided design (TCAD). The regrown n++ GaN source/drain ohmic contacts show a peak drain current density (I dmax) of 2.9 A/mm along with low on-resistance of 0.49 X mm. A record power gain cutoff frequency (f max) of 425 GHz along with current gain cutoff frequency (f t) of 310 GHz are obtained by the substantial reduction in the device's intrinsic and extrinsic parasitic resistances and capacitances. A very thin 7nm In 0.13 Al 0.83 Ga 0.04 N quaternary barrier with an AlGaN back-barrier structure effectively mitigates the short-channel effect with an improved breakdown voltage (V BR) of 38 V. The prominent DC and microwave characteristics of the proposed HEMT make it an appropriate candidate for nextgeneration high-power millimeter-wave electronics.

This paper deals with a modified planar inverted F‐antenna designed to operate at 2.3 GHz. The modifications are done with an intention of achieving wide bandwidth. It involves the simulation of a basic PIFA, for which dual U‐Slots are deployed and in order to obtain wider bandwidth the concept of the partial ground is taken into consideration. The main motivation behind this is to achieve an impedance bandwidth over 1 GHz which will prove to be useful in addressing several types of wireless and mobile applications. The simulated findings show that proposed PIFA achieved a bandwidth of 1.35 GHz (55.9%) with a gain close to 4.98 dB. The new antenna's size 20 mm × 10 mm (L1 × L2 mm) was compact and the fabrication cost is also less. The fabricated prototype was tested and measured and a good agreement was observed between the simulated and the measured results.

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