Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications

Abstract

We report direct current (DC) and microwave performance of a 50-nm gate length (L g) quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC substrate with SiN passivation and by using a Tgate. The proposed HEMT structure is simulated using industry-standard Synopsys Sentaurus technology computer-aided design (TCAD). The regrown n++ GaN source/drain ohmic contacts show a peak drain current density (I dmax) of 2.9 A/mm along with low on-resistance of 0.49 X mm. A record power gain cutoff frequency (f max) of 425 GHz along with current gain cutoff frequency (f t) of 310 GHz are obtained by the substantial reduction in the device's intrinsic and extrinsic parasitic resistances and capacitances. A very thin 7nm In 0.13 Al 0.83 Ga 0.04 N quaternary barrier with an AlGaN back-barrier structure effectively mitigates the short-channel effect with an improved breakdown voltage (V BR) of 38 V. The prominent DC and microwave characteristics of the proposed HEMT make it an appropriate candidate for nextgeneration high-power millimeter-wave electronics.

A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure

“…6 Among various architectures, junction-barrier Schottky diodes, highelectron-mobility transistors (HEMTs), low-voltage power fieldeffect transistors (FETs) with low voltages, and high-frequency devices are receiving attention as near-future power devices. 7 Si plays a dominant role in power electronics systems. However, the relatively narrow bandgap of Si (1.1 eV at room temperature) leaves little potential for the further advancement of Si application in these systems.…”

“…6 Among various architectures, junction-barrier Schottky diodes, high-electron-mobility transistors (HEMTs), low-voltage power field-effect transistors (FETs) with low voltages, and high-frequency devices are receiving attention as near-future power devices. 7…”

Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications

“…One novel approach, initially suggested by Ketteniss et al and subsequently confirmed, involves using a thin quaternary AlInGaN barrier layer that introduces polarization engineering between the barrier and the GaN channel, enabling E-mode operation [11,12]. Quaternary nitride has garnered significant attention as an alternative to AlGaN barrier layers due to its promising DC and RF performance, including the ability to utilize high aluminum content, leading to increased spontaneous polarization induced by high 2DEG carrier density (ns > ~1.8×10 13 cm -2 ) and high mobility (µ > ~ 1800 cm 2 /V s) [13][14][15]. Traditionally, since 1991, HEMT transistors have been designed and fabricated with a single barrier layer [16].…”

Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate

“…For improved device power performance, enhancing the breakdown voltage is a must and several technologies have been proposed and developed to meet this goal. GaN HEMT breakdown voltage is enhanced by the incorporation of GFP, 10 source field plate (SFP), 11 drain field plate (DFP), 12 multiple grating field plates, 13 buried p-type layer 14 or acceptor-type doping of the GaN buffer, 15 double heterojunction back barrier 16,17 enabling better carrier confinement and filleted gate geometry to address reliability issues. 18,19 However, most research work focuses on GFP technology as it turns out to be an effective method for improving breakdown performance due to reduction and redistribution of the electric field in the critical drain access region without changing the epitaxial stack.…”