of programmable devices are retention time, conductanceoperating voltage range, device dimensions, and robustness. [3] The memristor, which is considered the fourth circuit element, [4] is a good example of a programmable resistor. [5,6] Along with other resistive devices, memristors have been integrated into several domains such as: a) computing including in-memory computing, near-memory computing, and resistive computing with crossbar arrays, b) data storage including both passive and active types corresponding to long-term and short-term data retention times, respectively, and c) other domains such as logic-gate realizations and radio-frequency switches.However, due to challenges faced with memristor fabrication, these nano-devices are often replaced by emulating circuits fabricated using a standard CMOS process. [7] Although many memristor emulators have circuit responses close to that of the actual device, they still lack the potential to trap charges for long periods of time, a problem that is commonly solved using charge traps (CTs). A CT is a circuit branch designed to prolong the circuit's retention time, and in most designs, it is implemented using floating gate transistors (FGTs) which have been demonstrated in 1971. [8] FGTs were utilized in various applications that need non-volatile analog memories as in electrically erasable programmable read only memories (EEPROMs). [9] They have also become an integral part of analog computing engines that depend on crossbar arrays, replacing the tiny resistive devices in these structures. [10] Moreover, FGTs were used in programmable analog solvers like field programmable analog arrays (FPAAs), which add flexibility to analog-based circuit solutions. [11,12] Some CTs (an FGT trap, for example) can trap charges for long periods of time (up to 10 years). This characteristic is often referred to as retention time. The underlying CMOS process has a direct effect on this characteristic. Not only are CTs characterized by their retention times, but also by other features that contribute to giving each CT a unique identity. Some of these features which directly relate to FGTs are: a) the transistor dimensions, length and width, which affect the tunneled current and induce more parasitic capacitance in a cell; b) the dielectric thickness which has a direct effect on charge tunneling; c) the charging capacity, and d) the discharging