2018
DOI: 10.1109/tetci.2018.2849109
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Breaking Through the Speed-Power-Accuracy Tradeoff in ADCs Using a Memristive Neuromorphic Architecture

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Cited by 48 publications
(19 citation statements)
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“…Such hardware networks, commonly referred to as neuromorphic electronic systems [33], implement configurable DNNs as analog components. Recent advances in memristors technology substantially facilitate the implementation of these hardware devices [39], contributing to the feasibility of our proposed deep task-based quantizer.…”
Section: Discussionmentioning
confidence: 99%
“…Such hardware networks, commonly referred to as neuromorphic electronic systems [33], implement configurable DNNs as analog components. Recent advances in memristors technology substantially facilitate the implementation of these hardware devices [39], contributing to the feasibility of our proposed deep task-based quantizer.…”
Section: Discussionmentioning
confidence: 99%
“…61 ), useful for a variety of intracellular and extracellular biosensing applications. The conversion of analog information into digital encoding is a classification problem that is efficiently solved by ANN architectures 62 ( Supplementary Notes , Design and implementation of 2-bit log-ADC). We evaluated three designs, starting from a perceptgene adaptation of a classical ADC perceptron network 62 , a second design that adds two inhibitory regulatory links, and a third design that improves the fidelity of the digital output signals.…”
Section: Resultsmentioning
confidence: 99%
“…[ 22,23 ] Meanwhile, other research started with a verified CAD model which was then utilized to fabricate an FGT in a standard 180 nm CMOS process. [ 10,27 ]…”
Section: Introductionmentioning
confidence: 99%
“…[22,23] Meanwhile, other research started with a verified CAD model which was then utilized to fabricate an FGT in a standard 180 nm CMOS process. [10,27] The reported effective voltage range for charge tunneling in MOSFETs with 20 and 7 nm dielectric is between 1.2 and 5 V for transistors fabricated with 0.25 and 0.18 µm CMOS processes. [26] The thinner the dielectric layer is, the trickier it becomes reliably and controllably tunnel charges through it, because of the high sensitivity of the tunneling mechanism to the applied voltage.…”
Section: Introductionmentioning
confidence: 99%