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We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with = 3 10 19 cm 3 . The obtainedand MAX values at a current density of 1 mA/ m 2 are comparable to the values reported for DHBTs with a grade layer between the base and the collector.

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