Broadband 2.4<i>μ</i>m superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules

Wootten, Michael; Tan, Jin-Hui; Chien, Yu-Mo; Olesberg, J. T.; Prineas, J. P.

doi:10.1088/0268-1242/29/11/115014

Cited by 14 publications

(6 citation statements)

References 33 publications

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“…In this case a major requirement is amplifiedspontaneous-emission (ASE) power and spectral width. So far, few single-spatial-mode SLD devices have been reported operating > 2 micron wavelength range with output power spectral density higher than 1 μW/nm [5]. In this work we report significant improvement in the GaSb type-I SLD device performance in terms of output power, operating temperature and spectral bandwidth.…”

mentioning

confidence: 63%

High-performance GaSb laser diodes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications

Dvinelis¹,

Trinkūnas²,

Greibus³

et al. 2015

SPIE Proceedings

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Mid-infrared spectral region (2-4 µm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, and defense applications. Gas sensing in this spectral region is attractive due to the presence of numerous absorption lines for such gases as methane, ethane, ozone, carbon dioxide, carbon monoxide, etc. Sensing of the mentioned gas species is of particular importance for applications such as atmospheric LIDAR, petrochemical industry, greenhouse gas monitoring, etc. Defense applications benefit from the presence of covert atmospheric transmission window in the 2.1-2.3 micron band which is more eye-safe and offers less Rayleigh scattering than the conventional atmospheric windows in the near-infrared. Major requirement to enable these application is the availability of high-performance, continuous-wave laser sources in this window. Type-I GaSb-based laser diodes are ideal candidates for these applications as they offer direct emission possibility, high-gain and continuous wave operation. Moreover, due to the nature of type-I transition, these devices have a characteristic low operation voltage, which results in very low input powers and high wall-plug efficiency.In this work, we present recent results of 2 µm -3.0 µm wavelength room-temperature CW light sources based on type-I GaSb developed at Brolis Semiconductors. We discuss performance of defense oriented high-power multimode laser diodes with > 1 W CW power output with over 30 % WPE as well as ~ 100 mW single TE00 Fabry-Perot chips. In addition, recent development efforts on sensing oriented broad gain superluminescent gain chips will be presented.Keywords: GaSb laser diode, mid-infrared laser diode, quantum-well (QW) lasers, superluminescent diode (SLD), antimonides.Semiconductor laser diodes at wavelengths > 2 µm are becoming increasingly interesting for many sensing and defense applications. In particular, due to strong water, H2S, N2O, HF, CO and CO2 absorption in this range, such lasers can be used for sensing applications of mentioned gas molecules [1]. Proof-of-concept type-I GaSb laser diode devices were demonstrated to operate at room temperature up to 3.7 μm [2], showing huge potential for these direct emission sources, and industrial R&D effort in the field of GaSb type-I device development has intensified. Different light source types are required depending on the sensing system requirements. Ultra-high resolution spectroscopy systems require mode-hop-free single-frequency tuning over a broad wavelength range. Typically, such systems employ a gain chip mounted in external cavity laser (ECL) configuration [3], which allows tuning the wavelength across the entire gain bandwidth of the gain chip. Main gain chip requirements for ECL application are low-facet reflectivity, broad gain and sufficient output power. Facet reflectivity is required to be below 0.1 %. GaSb type-I gain chips are ideal candidates for ECL application as they offer very high gain, low-power consumption and hig...

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confidence: 63%

High-performance GaSb laser diodes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications

Dvinelis¹,

Trinkūnas²,

Greibus³

et al. 2015

SPIE Proceedings

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“…The severe power degradation at longer wavelengths is mainly due to the thermally activated Auger recombination process, 14 which increases with the wavelength, and is the dominant non-radiative recombination process at room temperature. 14,15 Moreover, the SLD carrier density in the active region increases monotonically with the current 16,17 rapidly increasing the Auger recombination rate as this is proportional to the third power of carrier density. 18 In this letter, we report the development of a SLD at 2.55 lm, delivering mW-level average output power.…”

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confidence: 99%

GaSb superluminescent diodes with broadband emission at 2.55 μm

Zia

Viheriälä

Koivusalo

et al. 2018

Applied Physics Letters

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We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

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“…Thus, the performance of SLDs for 2-3 lm spectral range has not met the demands of sensing applications due to very low output powers. 7,8 Recent demonstration in this area includes continuous wave (CW) operation of SLDs at room temperature (RT) with output powers up to 40 mW at 2.05 lm and 5 mW at 2.38 lm. Here, we report a GaSb-based single-transverse mode SLD emitting at $1.9 lm with a maximum output power of $60 mW.…”

mentioning

confidence: 99%

“…Preliminary observations indicated that when using conventional fabrication techniques, the output power for SLDs operating in this wavelength range is limited by facet reflections. 7 Applying low enough anti-reflection coating is challenging but we circumvented this by implementing a chip geometry preventing reflection from facet(s). Our approach enables high power operation even in the absence of anti-reflection coatings.…”

mentioning

confidence: 99%

High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element

Zia

Viheriälä

Koskinen

et al. 2016

Applied Physics Letters

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The characteristics and the fabrication of a 1.9 μm superluminescent diode utilizing a cavity suppression element are reported. The strong suppression of reflections allows the device to reach high gain without any sign of lasing modes. The high gain enables strong amplified spontaneous emission and output power up to 60 mW in a single transverse mode. At high gain, the spectrum is centered around 1.9 μm and the full width at half maximum is as large as 60 nm. The power and spectral characteristics pave the way for demonstrating compact and efficient light sources for spectroscopy. In particular, the light source meets requirements for coupling to silicon waveguides and fills a need for leveraging to mid-IR applications photonics integration circuit concepts exploiting hybrid integration to silicon technology.

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Broadband 2.4μm superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules

Cited by 14 publications

References 33 publications

High-performance GaSb laser diodes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications

High-performance GaSb laser diodes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications

GaSb superluminescent diodes with broadband emission at 2.55 μm

High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element

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