Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

Krishnamurthy, K.; Vetury, R.; Keller, S.; Mishra, Umesh K.; Rodwell, M.J.W.; Long, S.I.

doi:10.1109/4.868037

Cited by 47 publications

(2 citation statements)

References 15 publications

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“…(fT) but suffer from inequal collector currents, which may cause potential instability at low frequencies [11]. The problem of the inequal collector current of the Darlington pair structure can be removed by using a modified fT-doubler cell.…”

Section: Proposed F T -Doubler Rf Amplifier With Tsvsmentioning

confidence: 99%

“…The cascode topology provides increased output resistance that leads to a higher output voltage, and increased isolation between the input and output ports, which simplifies the design of the matching network and reduces the Miller effect, at the cost of a higher power supply. Darlington structure-based amplifiers improve the unity-gain frequency (f T ) but suffer from inequal collector currents, which may cause potential instability at low frequencies [11]. The problem of the inequal collector current of the Darlington pair structure can be removed by using a modified f T -doubler cell.…”

Section: Introductionmentioning

confidence: 99%

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Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an fT-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 µm SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.

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Section: Proposed F T -Doubler Rf Amplifier With Tsvsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Sarker

Song

2020

Electronics

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A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

Sayginer

Yazgi

2014

Int J RF and Microwave Comp Aid Eng

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In this article, a systematic design approach for a Class‐A operated wideband power amplifier is presented. The power amplifier structure comprises of two transistors in the cascaded single stage traveling wave amplifier topology. A power amplifier was designed by using the systematic approach and fabricated with 0.25 μm GaAs PHEMT MMIC process. The amplifier has an area of 3.4 × 1.4 mm2. Measurement results show that almost flat gain performance is obtained around 15 dB over 1.5–9 GHz operating bandwidth. In most of the band, with the help of a wideband load‐pull matching technique, the amplifier delivers Po,sat and Po,1dB of around 30 dBm and 28 dBm where the corresponding power added efficiencies are >50% and >36%, respectively. It is shown that the proposed design approach has the advantage of simple and systematic design flow and it helps to realize step‐by‐step design for the designers. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:615–622, 2014.

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Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model

Wang

et al. 2020

Int J RF Microw Comput Aided Eng

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Stacked structure is a good solution to overcome the low output voltage swing provided by a single device. When several devices are stacked, the bandwidth and output power are multiple times higher. This article analyzes the small‐signal voltage gain of the stacked structure, deriving the gain expression of the high‐frequency model and simplified model. Based on the specific device parameter, the different small‐signal voltage gains between the two models are compared and the designed stacked structure is proved to obtain a flat gain at low frequencies below about 3 GHz. To our best knowledge, this is the first article to analyze the gain flatness of stacked structure with two equivalent circuit models. To verify the stacked theory, a pseudomorphic high‐electron‐mobility transistor（PHEMT） power amplifier (PA) is implemented using 0.25 μm Gallium arsenide (GaAs) technology. The PA achieves an ultra‐high bandwidth of 30 MHz to 3 GHz and a linear gain of 21 dB ± 1.5 dB. At a 16‐V drain bias voltage, a saturated output power of higher than 2 W and a peak power‐added efficiency (PAE) of 44.1% are attained.

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Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

Cited by 47 publications

References 15 publications

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology

A systematic design of 1.5-9 GHz high power-high efficiency two-stage GaAs PHEMT power amplifier

Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model

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