Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Abstract

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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

“…Relative few studies reported on analysis of slow traps (>10 s) [12,13], which might affect the long term stability of these devices. Recently, V TH transient was used for the trap analysis on the AlGaN/GaN MIS-HEMTs with a gate dielectric of Al 2 O 3 [14]. However, the trapping/de-trapping phenomena still remain unclear under the gate dielectrics of in-situ Si 3 N 4 .…”

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

“…It means that only a limited number of the interface states can be detected during the standard C-V measurements. Although several groups have proposed new methods to characterize electronic states in the MOS-HEMT structures, [14][15][16][17] there have been few reports on MOS interface state densities of the GaN-based MOS-HEMTs and their relationship to the resulting electrical properties has not been discussed in detail.…”

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

“…Two complementary techniques were used: (1) D it in the energy range of E C -E ¼ 0.5-1.0 eV was determined using V th -transients, deduced from the capacitance transients measured at V g %V th À0.5 V at temperatures of 25, 75, and 125 C. Only relative change (DV th ) between V th transients measured after "filling" pulse V F ¼ 0 (no filling) and V F ¼ 1.5 V (interface traps filling) was used for D it determination, to cancel out possible bulk trapping process (i.e., V th drift) previously discussed in Ref. 15. D it (E) was determined from the time derivative of DV th -t. (2) Filtered light-assisted V th transient technique was used to determine D it distribution of very deep interface states in the range of 1.75-3.25 eV below E C .…”

“…In contrast to Ref. 15, the light was exposed 50 s after beginning of the transient and kept exposed until the termination of the measurement. Finally, the C-V curves of the MOS-HEMT structures were calculated using a numerical solver of the one-dimensional Poisson equation with the Shockley-Read-Hall statistics accounting for the interface traps response, taking the measurement time into account.…”

“…This can be understood as a result of electron injection from the gate electrode into bulk traps in the Al 2 O 3 similar to Ref. 15. To cancel this parasitic trapping out, only the difference between V th -transients with V F ¼ 1.5 V (interface traps filling) and V F ¼ 0 V (no filling) was used to calculate D it distribution for a given temperature.…”