1987
DOI: 10.1116/1.574671
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Bulk and surface optical absorption in molybdenum disulfide

Abstract: Articles you may be interested inProtection and reduction of surface oxidation of Mo ∕ Si multilayers for extreme ultraviolet lithography projection optics by control of hydrocarbon gas atmosphere

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Cited by 95 publications
(80 citation statements)
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“…2, we note that the lateral dimensions of the majority of MoS 2 flakes is ~100-200 nm, resulting in a large edge to surface area ratio. We suggest that in spite of operating at below the material bandgap, our device initiates modelocking because of saturable absorption from the edge-related sub-bandgap states [49,50]. The output wavelength is tunable from 1,535 to 1,565 nm (as shown in Fig.…”
Section: Wideband Tunable Ultrafast Er:fiber Laser Using Mos 2 -Pva Cmentioning
confidence: 98%
See 1 more Smart Citation
“…2, we note that the lateral dimensions of the majority of MoS 2 flakes is ~100-200 nm, resulting in a large edge to surface area ratio. We suggest that in spite of operating at below the material bandgap, our device initiates modelocking because of saturable absorption from the edge-related sub-bandgap states [49,50]. The output wavelength is tunable from 1,535 to 1,565 nm (as shown in Fig.…”
Section: Wideband Tunable Ultrafast Er:fiber Laser Using Mos 2 -Pva Cmentioning
confidence: 98%
“…We propose that the large edge-to-surface ratio of the nanoflakes in the samples give rise to interband absorbing states [49]. Indeed, lithographically textured MoS 2 single crystals have been reported to exhibit over one order of magnitude higher sub-bandgap optical absorption than that observed in the single crystals due to energy levels arising from the edge states within the bandgap [50].…”
mentioning
confidence: 95%
“…The lamellar crystal of MoS 2 , as a semiconductor with a narrow band gap, can be efficiently excited by visible light to form the pair of electron and hole, and its layered structure is so similar to graphene or a botanical leaf that the light can be harvested on its surface maximally and the photogenerated electron can be transferred rapidly. Meanwhile, multilayer crystals of MoS 2 have semiconductor properties with an indirect band gap of ≈1.3 eV, whereas monolayer MoS 2 shows a direct optical band gap of ≈1.9 eV . Such a kind of MoS 2 with an adjustable band gap, therefore, has great significance in research and potential applications in photocatalysis, photoelectronic devices, solar cells, and so on .…”
Section: Introductionmentioning
confidence: 99%
“…For example, the energy of the lowest optical transition in MoS 2 increases from 1.2 eV (ref. 12) in bulk to 1.9 eV (ref. 13) for a monolayer with an associated strong increase in photoluminescence 14 that has been attributed to the transition from indirect to direct band gap.…”
Section: Introductionmentioning
confidence: 99%