Articles you may be interested inProtection and reduction of surface oxidation of Mo ∕ Si multilayers for extreme ultraviolet lithography projection optics by control of hydrocarbon gas atmosphere

Complete statistical randomization of the direction of propagation of light trapped in semiconductor films can result in a large absorption enhancement. We have employed a calorimetric technique, photothermal deflection spectroscopy, to monitor the absorption of alpha-SiH(x) films textured by the natural lithography process. The observed enhancement factors, as high as 11.5, are consistent with full internal phase-space randomization of the incoming light.

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Lithographic techniques were used to expose edge surfaces in layered molybdenum disulfide single crystals. This microstructuring produced ideal samples for the study of the surface morphology and electronic structure of this catalytically important material. The optical absorption that was measured at mid-gap increased by two orders of magnitude after texturing. This increase resulted from reduced molybdenum at surface defects that are located on edge planes, as shown by photoemission spectroscopy. This information cannot easily be obtained on conventional crystals with predominantly basal plane surfaces.