Bumpless Interconnect Through Ultrafine Cu Electrodes by Means of Surface-Activated Bonding (SAB) Method

Shigetou, Akitsu; Itoh, Toshihiro; Matsuo, M.; Hayasaka, N.; Okumura, K.; Suga, Tadatomo

doi:10.1109/tadvp.2006.873138

Cited by 129 publications

(54 citation statements)

References 8 publications

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“…High bond strength can be achieved because of the covalent bonding between the atoms of the cleaned and smooth surfaces of the bonded pair [22]. For vertical electrical interconnections, the direct adhesion approach has been demonstrated through bonding of 60 nm height Cu bumps, resulting in high interfacial conductivity [98]. This approach has also been used to bond Cu-filled through-Si vias and Au stud bumps [99].…”

Section: Surface Activated Bondingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Abstract:Silicon-based integrated systems are actively pursued for sensing and imaging applications. A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. Further, the interface quality between the tiny optoelectronic structures and the substrate for alignment and coupling of the signals significantly impacts the system's performance. These systems also have to be low-cost, densely integrated and compatible with current and future mainstream technologies for electronic-photonic integration. To address these issues, proper selection of the fabrication, integration and assembly technologies is needed. In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate different electronics, optical and photonic components. Surface activated bonding, superior to other assembly methods, enables low-temperature nanoscaled component integration with high alignment accuracy, low electrical loss and high transparency of the interface. These features are preferred for the hybrid integration of silicon-based micro-opto-electronic systems. In future, new materials and assembly technologies may emerge to enhance the performance of these micro systems and reduce their cost. The article is a detailed review of bonding techniques for electronic, optical and photonic components in silicon-based systems.

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Section: Surface Activated Bondingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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“…The activated surface becomes reactive to form chemical bond even at room temperature. It is reported that various materials can be bonded by SAB method, such as various metals [4], [5] and semiconductor materials [6], [7] at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Novel sealing technology for organic EL display and lighting by means of modified surface activated bonding method

Matsumae

Fujino

Suga

2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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For a sealing of organic electro luminescence displays and lightings, a room temperature bonding of polymer films without organic adhesives is required. This paper describes a new bonding technique called modified surface activated bonding (mSAB) method using nano-adhesion layer that meets the requirement. Polymer films such as PEN, PET and PI can be bonded by this method. Especially PEN and PET films are so strongly bonded that the bond interface has tolerance for bending and loci of fracture after a peeling test are located in the polymer bulk. The organic electro luminescence lighting bonded by the proposed method clears environmental tests such as high temperature and high humidity tests. IntroductionOrganic electro-luminescent display (OELD) and lighting have attracted great interest because of their advantages such as thin profile, lightweight, and low driving voltage. However moisture and oxygen that may permeate the OLED cause detachment between the organic luminescent layer and the cathode electrode, cracking of the organic materials, and oxidation of the electrodes. Therefore, the commercial OELDs are made of glass substrate and the substrates are sealed by glass frit bonding. However increasing the size of the OELD, the process of glass frit bonding will be hardly adopted because of the brittleness of the glass sealing. The other potential applications of OELD are flexible displays and lightings, which are fabricated on polymer substrates. For those applications, polymer films with high gas barrier characteristics such as polyethylene naphthalate (PEN) have been developed. However there is no suitable adhesive for good sealing agent against permeation of water and oxygen from the atmosphere. Although a thermal compression bonding method realizes bonding without organic adhesives, polymer films and components of organic electronic are easily damaged at annealing process. Therefore, a new bonding technique of polymer films at room temperature without organic adhesives is required for the application of organic electronics.Surface activated bonding (SAB) method is a promising candidate for the room temperature bonding without organic adhesive [1]-[3] . In the SAB method, contamination and native oxide layer on the material surface are removed by Ar ion beam bombardment in an ultra-high vacuum (UHV) pressure. The activated surface becomes reactive to form chemical bond even at room temperature. It is reported that various materials can be bonded by SAB method, such as various metals [4], [5] and semiconductor materials [6], [7] at room temperature.

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“…[6] Although low temperature Cu-Cu bonding at less than 150°C has been reported, the bonding technique requires an ultra-high vacuum. [7] However, Cu-Cu bonding has generally been carried out in a vacuum chamber after surface cleaning because Cu surface oxidation prevents the occurrence of Cu atomic diffusion under atmospheric conditions. Cu-Cu bonding using ultrasonic vibration is a promising solution of challenges of Cu-Cu diffusion bonding because the ultrasonic vibration can break the oxide film of Cu surface.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Ultrasonic Vibration Energy on Cu-Cu Direct Bonding for Flip-Chip Interconnection

Arai

Nimura

Tomokage

2014

Transactions of The Japan Institute of Electronics Packaging

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In this study, we evaluated the ultrasonic vibration energy required for Cu-Cu bonding using flip-chip bonding technology in air atmosphere. The transmissibility of the ultrasonic vibration was assumed to be different in bump structures with high or low stiffness values. Therefore, we investigated the bonding strengths of Cu bumps with different aspect ratios (bump heights of 5 μm, 20 μm, and 40 μm). As a result, we found that the 20 μm-high Cu bumps were properly bonded with sufficient bonding strength by comparison with the other bumps. No significant voids that decrease the bonding reliability were present at the Cu-Cu interface of well-bonded Cu bumps. In addition, coplanarity between the bonding head and the stage surface was found to be an important factor for ultrasonic bonding, because it enabled all bumps to start to bond simultaneously.

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Bumpless Interconnect Through Ultrafine Cu Electrodes by Means of Surface-Activated Bonding (SAB) Method

Cited by 129 publications

References 8 publications

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Novel sealing technology for organic EL display and lighting by means of modified surface activated bonding method

Evaluation of Ultrasonic Vibration Energy on Cu-Cu Direct Bonding for Flip-Chip Interconnection

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