Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography

Abstract

Articles you may be interested inFine structure of electronhole complexes in single semimagnetic quantum dots AIP Conf.

Comparison of the Magnetic and Optical Properties of Wide‐Gap (II,Mn)VI Nanostructures Confined in Mesoporous Silica

“…Plots of the Curie-Weiss temperature Θ versus Mn content x in percent obtained by analysing the EPR data of 3, 6, and 9 nm Cd 1-x Mn x S particles (left) and 3, 6, and 9 nm Zn 1-x Mn x S particles (right). The solid line is calculated using Equation (5), the dashed and dotted lines are calculated using Equation (8).…”

“…In order to fabricate 0D quantum dots or 1D quantum wires, the conventionally used top-down approach (see Figure 1) is to start with two-dimensional quantum wells and to use a lithographic pattern definition followed by a pattern transfer, usually a subsequent etching procedure [1][2][3][4][5][6][7] or a controlled local diffusion process due to ion-bombardment. [8,9] Such top-down approaches usually only yield magnetic semiconductor nanostructures of good structural and optical quality for lateral sizes larger than about 50 nm. Below this size, fabrication-induced surface damage deteriorates the quality of the structures and has a strong undesired effect on optical and magnetic properties.…”

Complex dielectric constant of Cd0.8SMn0.2Te crystals near the fundamental absorption edge

“…The promises of this interaction include optical isolators on the giant Faraday effect [2], spintronics [3], lasers [4], and other device applications of tunable bands and lines observed in bulk crystals, magnetic quantum wells [5][6][7], and dots [8,9]. Device operation at the fundamental absorption edge is of special interest because of the most pronounced dependence of the material optical parameters on the interacting photon energy.…”

Tuning the optical and magnetic properties of II–VI quantum dots by post‐growth rapid thermal annealing

“…In particular, it has been shown that for quantum wells both the emission energy and the distribution of magnetic impurities can be modified [1,2]. The latter can lead to substantial changes of the magneto-optical properties of magnetically doped quantum well structures.…”

“…We find that for annealed CdTe QDs the exciton diamagnetic shift is about two times larger that for the as-grown ones, suggesting an increase of the average dot size upon annealing. In the case of CdMnTe QDs the emission lines of individual quantum dots narrow significantly from 3 meV down to 0.25 meV showing that effect of spin fluctuations is much reduced probably due to an increase of the average dot size.1 Introduction Post-growth annealing has been widely used to change the properties of semiconductor quantum structures [1][2][3]. In particular, it has been shown that for quantum wells both the emission energy and the distribution of magnetic impurities can be modified [1,2].…”