CAD-oriented equivalent circuit modeling of on-chip interconnects for RF integrated circuits in CMOS technology

Zheng, Jiangtao; Hahm, Yeon-Chang; Weisshaar, A.; Tripathi, V.K.

doi:10.1109/mwsym.1999.779419

Cited by 12 publications

(12 citation statements)

References 12 publications

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“…For relatively low bulk resistivities of the silicon substrate on the order of 0.01 -cm (e.g., in some analog CMOS processes), the and parameters typically exhibit significant variation in the low gigahertz range while and remain relatively flat up to frequencies of tens of gigahertz. In contrast, for medium-to-high resistivity substrates on the order of 10 -cm, both and vary significantly in the low gigahertz range while is nearly constant up to frequencies of tens of gigahertz [13], [14].…”

Section: Introductionmentioning

confidence: 87%

Enhanced transmission characteristics of on-chip interconnects with orthogonal gridded shield

Lutz

Tripathi²,

Weisshaar³

2001

IEEE Trans. Adv. Packag.

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On-chip interconnects over an orthogonal grid of grounded shielding lines on the silicon substrate are characterized by full-wave electromagnetic simulation. The analysis is based on a unit cell of the periodic shielded interconnect structure. It is demonstrated that the shielding structure may help to significantly enhance the transmission characteristics of on-chip interconnects particularly in analog and mixed-signal integrated circuits with bulk substrate resistivity on the order of 10 -cm.Simulation results for the extracted transmission line parameters show a significant decrease in the frequency-dependence of the distributed shunt capacitance as well as decrease in shunt conductance with the shielding structure present, while the series inductance and series resistance parameters are nearly unaffected. An extension of the equivalent circuit model for the shunt admittance of unshielded on-chip interconnects to include the effects of shielding is also presented. Index Terms-On-chip interconnects, orthogonal gridded shield, periodic structures, shielded MIS microstrip, slow-wave transmission lines.Vijai K. Tripathi (M'68-SM'

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Section: Introductionmentioning

confidence: 87%

Enhanced transmission characteristics of on-chip interconnects with orthogonal gridded shield

Lutz

Tripathi²,

Weisshaar³

2001

IEEE Trans. Adv. Packag.

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“…In order to prove the validity of the given approach self and mutual per unit length shunt admittance (capacitance and conductance per unit length) calculated using our procedure are compared with the results of the full-wave analysis (spectral domain approach) and with those obtained by using equivalent-circuit modelling technique (Zheng et al, 1999). In Figure 5, an asymmetric coupled interconnect structure is depicted with the following electrical and geometrical parameters: d ¼ 500 mm; t ox ¼ 2 mm; w 1 ¼ 4 mm; w 2 ¼ 1 mm; T 1 ¼ T 2 ¼ 1 mm; 1 si ¼ 11:8; r si ¼ 0:01 V cm; 1 ox ¼ 3:9 and s ¼ 4 mm: Figure 6a shows the variation in the distributed self and mutual capacitance per unit length C 11 (v ), C 22 (v ), and C 12 (v ), as a function of the frequency.…”

Section: Asymmetric Coupled Interconnects On An Si -Sio 2 Substratementioning

confidence: 99%

“…It has been well established that the resistivity–frequency plane can be divided into main three regions: the dissipative dielectric region, the slow‐wave region, and the skin‐effect region. Recently quasi‐TEM analysis of coplanar structure has made the incorporation of metallic conductor and silicon substrate losses in the analysis possible and have provided a physical basis for the construction of equivalent circuits (Kwon et al , 1987; Zheng et al , 1999).…”

Section: Introductionmentioning

confidence: 99%

On the frequency‐dependent line capacitance and conductance of on‐chip interconnects on lossy silicon substrate

Ymeri

Nauwelaers²,

Maex³

2002

Microelectronics International

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation.

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“…As a result, RF interconnects play an increasingly important role in RFICs [2]. To date, one of the limiting factors of RFIC designs is the absence of accurate interconnect models [3]. In the literature, most studies have focused on simple structures such as straight lines, doubleparalleled lines, and so forth [4 -7].…”

Section: Introductionmentioning

confidence: 99%

“…Quadrature and 180°hybrid couplers are used extensively in various microwave circuit applications [1][2][3]. In planar-circuit technology, most couplers are based on coupling by coupled line or branch line [1].…”

Section: Introductionmentioning

confidence: 99%

RF equivalent‐circuit model of interconnect bends based onS‐parameter measurements

Shi

Ong

et al. 2005

Micro & Optical Tech Letters

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A modified model for RF interconnect bends on lossy substrate in CMOS technology is presented. The model parameters are extracted directly from the on‐wafer S‐parameter measurements. The accuracy is verified up to 20 GHz by the measurements of the test structures. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 170–173, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20760

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CAD-oriented equivalent circuit modeling of on-chip interconnects for RF integrated circuits in CMOS technology

Cited by 12 publications

References 12 publications

Enhanced transmission characteristics of on-chip interconnects with orthogonal gridded shield

Enhanced transmission characteristics of on-chip interconnects with orthogonal gridded shield

On the frequency‐dependent line capacitance and conductance of on‐chip interconnects on lossy silicon substrate

RF equivalent‐circuit model of interconnect bends based onS‐parameter measurements

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