Calculated and experimental electron energy-loss spectra of La2O3, La(OH)3, and LaOF nanophases in high permittivity lanthanum-based oxide layers

Calmels, L.; Coulon, Pierre‐Eugène; Schamm-Chardon, Sylvie

doi:10.1063/1.3600783

Cited by 16 publications

(18 citation statements)

References 28 publications

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“…1, almost all the GIXRD peaks attributed to h -La 2 O 3 disappear, whereas new peaks attributed to h -La(OH) 3 appear due to the hygroscopicity of La 2 O 3 [22, 23, 41]. It is noteworthy that strong h -La(OH) 3 phase peaks are only found in the well crystallized samples such as the 20 nm La 2 O 3 films annealed at 600 and 800 °C, while few weak peaks are observed in the amorphous disordered and nanometer-sized crystallographic samples.…”

Section: Resultsmentioning

confidence: 99%

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

et al. 2017

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La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

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Section: Resultsmentioning

confidence: 99%

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

et al. 2017

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“…After the annealing treatments, slight variation for the La–O–La signal was observed since few La–O–La bonds were formed in the deposition process due to the high formation enthalpy of La 2 O 3 [ 15 ]. Peak IV, related to La(OH) x , may come from the hygroscopicity of the La 2 O 3 [ 16 ]. After high temperature annealing treatments, significant decrease in the intensity of peak IV could be observed, indicating the reduction of hydroxyl groups [ 17 ].…”

Section: Resultsmentioning

confidence: 99%

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

et al. 2017

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We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

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“…Consequently, La-based oxides have been considered as one kind of the alternative gate dielectric materials deposited on Ge to realize good electrical performance of Ge-based metal-insulator-semiconductor (MIS) devices [7,8]. However, the hygroscopicity of La 2 O 3 layer limits its application as gate insulators [9]. In a previous study, we have proved that a ~2 nm La 2 O 3 interlayer could effectively improve the electrical performance of Ge MIS devices, resulting in more than one order of magnitude decrease in the gate leakage current density [10].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer

et al. 2019

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Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La2O3 passivation layer deposition cycles improves the surface smoothness of HfO2/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La2O3 passivation layer can affect the shift of flat band voltage (VFB), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La2O3 interlayer thickness.

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Calculated and experimental electron energy-loss spectra of La2O3, La(OH)3, and LaOF nanophases in high permittivity lanthanum-based oxide layers

Abstract: To cite this version:Lionel Calmels, Pierre-Eugène Coulon, Sylvie Schamm-Chardon. Calculated and experimental electron energy-loss spectra of La2O3, La(OH)(3), and LaOF nanophases in high permittivity lanthanumbased oxide layers.

Cited by 16 publications

References 28 publications

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer

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