1993
DOI: 10.1016/0038-1101(93)90084-4
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Calculation of critical-layer-thickness and strain relaxation in GexSi1−x strained layers with interacting 60 and 90° dislocations

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Cited by 30 publications
(9 citation statements)
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“…The above values of b 1 are valid for dislocations marked as Δ (Fig. 7), while for dislocations marked as ∇ , b1 has an opposite sign (Jain et al 1992(Jain et al , 1993. For 60° dislocations = arctg 1 √ 2 , = 3 .…”
Section: Numerical Methods and Results Of Calculationsmentioning
confidence: 78%
See 1 more Smart Citation
“…The above values of b 1 are valid for dislocations marked as Δ (Fig. 7), while for dislocations marked as ∇ , b1 has an opposite sign (Jain et al 1992(Jain et al , 1993. For 60° dislocations = arctg 1 √ 2 , = 3 .…”
Section: Numerical Methods and Results Of Calculationsmentioning
confidence: 78%
“…To partially relax biaxial stress, dislocations created form a matrix with equally spaced dislocation lines which are mutually perpendicular to each other To calculate the minimum of the energy Ě we numerically determined the values of p 1 , p 2 , p 3 , p 4 and p 5 . If the epitaxial layer contains dislocations with the average inter-dislocation p, the expression for strain becomes (Jain et al 1992(Jain et al , 1993(Jain et al , 1997Gosling et al 1993;Jóźwikowska et al 2019) where b 1 = −bsin sin and b is the magnitude of the Burgers vector, h i is the y coordinate of the i-th interface, k is selected so that h k < y . a(y) is the lattice constant in the layer without stress.…”
Section: Numerical Methods and Results Of Calculationsmentioning
confidence: 99%
“…To this end, we study how the instability of the system is affected by the stochastic motion of the r dislocations. The physical origin of this can be understood as follows: As discussed in [22], even for a spatially constant MD density there are fluctuations in the positions of individual MDs. These lead to fluctuations of the stress at the film surface around the average value determined in Section 3.1 (Eqs.…”
Section: Discussionmentioning
confidence: 99%
“…Because the Si 1Àx Ge x -thickness (10 -15 Am) of layers grown exceeds largely the critical thickness [58] for growth on Si, misfit dislocations relax the lattice strain, resulting from the lattice mismatch.…”
Section: Sige-alloysmentioning
confidence: 99%