Calculation of surface generation and recombination velocities at the Si-SiO2 interface

Eades, W. D.; Swanson, R.M.

doi:10.1063/1.335562

Cited by 184 publications

(73 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As device sizes get smaller, the surface-area-to-volume ratio increases, and custom control over the surface chemistry is required in order to optimize the desired performance. For example, untreated subsurface oxidation often compromises the performance of electronic devices [1][2][3] and optical sensors 4,5 and is particularly important for small devices such as nanowires. 6 Chemical modification 7,8 is used to form surfaces of high electrical quality that resist oxide growth.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Chemical Purity of Silicon Surfaces Reacted with Liquid Methanol

et al. 2008

View full text Add to dashboard Cite

The reaction of hydrogen-terminated Si(111) and oxide-terminated silicon surfaces with neat anhydrous liquid methanol (CH 3 OH) has been studied with Fourier transform infrared spectroscopy (FTIR) as a function of solution temperature and immersion time. At 65°C, reaction of atomically smooth H-Si(111) surfaces with CH 3 OH (l) results in partially methoxylated silicon surfaces that are free of any detectable subsurface oxidation (Si-O-Si bonds); this is in contrast to observable oxidation found after similar reactions on H-Si(100) surfaces. At long reaction times (t > 3 h), the Si(111) surface saturates with Si-OCH 3 sites at a coverage of approximately 30% of a monolayer, with the residual ∼70% comprised of unreacted Si-H sites. The lack of any detectable silicon oxide makes it possible to conclude the following: (i) Reaction mechanisms involving insertion of oxygen atoms from the CH 3 OH molecule into the subsurface Si-Si back bonds cannot be dominant for (111)-oriented silicon under these conditions. (ii) The vibrational modes of the oxide-free surface are very sharp and can be clearly distinguished from blue-shifted modes observed for methoxyl groups chemisorbed on oxidized surfaces. For surfaces that display subsurface oxidation, no evidence for oxygen atoms directly below atop Si-H sites has been observed. Instead, FTIR analysis demonstrates that subsurface oxidation selectively exists underneath atop Si-OCH 3 sites. Finally, H-terminated oxide surfaces, prepared by reacting trichlorosilanes on OH-terminated SiO 2 surfaces, react with methanol to form a methoxy-terminated oxide surface.

show abstract

Section: Introductionmentioning

confidence: 99%

Investigation of the Chemical Purity of Silicon Surfaces Reacted with Liquid Methanol

et al. 2008

View full text Add to dashboard Cite

show abstract

“…Active photonic devices rely heavily on III-V materials because of their proficiency for controlling optical processes 8 , yet etching small III-V structures debilitates material quality because of III-V compounds' sensitivity to surface conditions 9 . While SiO 2 offers remarkable surface passivation properties for silicon 10 , a comparable solution for III-V semiconductors remains absent. On the other hand, low-defect single-crystal nanostructures can be grown with atomically flat surfaces and in situ surface passivation via higher band gap cladding layers 11,12 , which have historically proven to provide the best passivation for III-V materials.…”

mentioning

confidence: 99%

Nanophotonic integrated circuits from nanoresonators grown on silicon

Chen

et al. 2014

Nat Commun

View full text Add to dashboard Cite

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

show abstract

“…The recombination losses of charge carriers on Si interfaces are mainly controlled by surface charge and the density and energetic distribution of rechargeable states D (E) [24]. As recently reported, the texturization of polished silicon substrates by anisotropic etching leads to a strong increase of crystallographic surface irregularities, resulting in a high density of rechargeable states, resulting in high recombination losses on structured interfaces.…”

Section: Monitoring Of Preparation-induced Surface Electronic Propertmentioning

confidence: 85%

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Rappich

Klimm

2009

Open Physics

View full text Add to dashboard Cite

Abstract:On textured n-type silicon substrates for solar cell manufacturing, the relation between light trapping behavior, structural imperfections, energetic distribution of interface state densities and interface recombination losses were investigated by applying surface sensitive techniques. The field-modulated surface photovoltage (SPV), in-situ photoluminescence (PL) measurements, total hemispherical UV-NIR-reflectance measurements and electron microscopy (SEM) were employed to yield detailed information on the influence of wet-chemical treatments on preparation induced micro-roughness and electronic properties of polished and textured silicon substrates. It was shown that isotropic as well as anisotropic etching of light trapping structures result in high surface micro-roughness and density of interface states. Removing damaged surface layers in the nm range by wet-chemical treatments, the density of these states and the related interface recombination loss can be reduced. In-situ PL measurements were applied to optimise HF-treatment times aimed at undamaged, oxide-free and hydrogen-terminated substrate surfaces as starting material for subsequent solar cell preparations. 73.20.At; 73.50.Pz; 81.65.Cf; 81.65 PACS (2008):

show abstract

Calculation of surface generation and recombination velocities at the Si-SiO2 interface

Cited by 184 publications

References 19 publications

Investigation of the Chemical Purity of Silicon Surfaces Reacted with Liquid Methanol

Investigation of the Chemical Purity of Silicon Surfaces Reacted with Liquid Methanol

Nanophotonic integrated circuits from nanoresonators grown on silicon

Wet-chemical treatment and electronic interface properties of silicon solar cell substrates

Contact Info

Product

Resources

About