Using deep level transient spectroscopy in the current transient mode, the interface trap density and electron and hole capture cross sections have been measured for thermally oxidized 〈100〉 silicon. We have compared oxides grown with and without HCl in the growth ambient, and also investigated the effect of the postoxidation inert ambient anneal. Values of the depleted surface generation velocity and surface recombination velocities in low- and high-level injection were then calculated from the measured interface trap parameters using Shockley–Read–Hall theory. We report here the results of the calculations and compare them with a few direct experimental measurements.

We have measured the surface recombination current J(ns,ps) at high quality thermally grown Si-SiO2 interfaces as a function of the surface density of electrons and holes, ns and ps. We find that the recombination is dominated by centers whose electron capture cross section is about 100 times greater than their hole capture cross section. Therefore, the maximum recombination occurs when ps≊100ns. Recombination is minimized under extreme electron or hole accumulation and is coincidentally the same in both cases: exp(qV/kT)×10−14 A/cm2.

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The general problems and limitations of photoaddressed liquid crystal spatial light modulators (SLMs) are discussed, and experimental results are presented. A GaAs wafer photoaddressed nematic liquid crystal SLM is described in detail with experimental results. The edge enhancing or differentiating SLM is discussed, and the results of GaAs photoaddressing are reported. The preliminary experimental behavior of photoaddressed ferroelectric liquid crystal SLMs is described.

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