Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure

Abstract

Quantum well intermixing (QWI) by the impurity-free vacancy disordering (IFVD) technique is an important and effective approach for the monolithic integration of optoelectronic devices based on InGaAs/InP quantum well structures. We experimentally investigate the influence of the capping layer SiO2 and Si3N4 on the QWI by IFVD. The results show that for all the samples with three-types differently doped (P, N and I) top InP layers, Si3N4 can always induce a larger photoluminescence blueshift than SiO2 in the IFVD QWI process, which attributes more to the group III and V vacancies point defects created in the interface of Si3N4-InP than that of SiO2-InP, proved by the SIMS measurements. The inherent mechanisms for explaining these properties are further discussed.

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

“…18,19 Secondary ion mass spectroscopy gives excellent information about the alloy composition, atomic homogeneity, and interface characteristics of grown layers with its depth profile measurements capability in the ppm range. [20][21][22] As depending on the development of epitaxial growth technology, many semiconductor materials have been developed for improving of infrared devices for sensing or imaging systems. Among these materials, MCT alloys are important due to its narrow band gap.…”

Large post-growth energy band-gap tuning of the 980 nm high power laser diode structures

“…quantum wells and quantum dots, have been largely used for developing high performance novel electronic and optoelectronic devices. Post-growth energy band gap tuning of the AlInGa As/InP quantum wells has been reported with their photoluminescence (PL) wavelength blue shift of 110nm after the QWI [2]; by capping with a Si 3 N 4 layer and annealing at 800 o C, the blue shift of an InGaAs/InP QW reaches 145nm [3]; The quantum wells/dots intermixing for the post-growth bandgap energy tunings have been intensively investigated [4][5][6][7][8][9], and very large energy band gap tuning has been received from the InGaAsP/ InGaAs/GaAs material system based QW and QD structures. Different intermixing techniques for the post-growth band gap energy tuning of the semiconductor QW structures and QD structures have been developed [8].…”