Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

Choi, Woong; Kim, Sunkook; Jin, Yong; Lee, Sang Yoon; Sands, Timothy D.

doi:10.1063/1.3561751

Cited by 21 publications

(13 citation statements)

References 16 publications

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“…8 The counter clockwise hysteresis is the normal orientation of a ferroelectric hysteresis in a MFS structure grown on n-type Si. 30 Knowing that the as-grown ZnO is n-type, 31 we expect also a counter clockwise hysteresis associated with polarization reversal in PZT. However, this is present only above 300 K. Below this temperature, the hysteresis is clockwise, suggesting strong influence from the defect state at the PZT-ZnO interface.…”

Section: Results and Disscusionmentioning

confidence: 97%

The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure

Pintilie

Pasuk

Ibanescu

et al. 2012

Journal of Applied Physics

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Articles you may be interested inThe effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode J. Appl. Phys. 112, 064116 (2012); 10.1063/1.4754318 Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt -ZnO -Pb ( Zr 0.2 Ti 0.8 ) O 3 -Pt heterostructures Appl. Phys. Lett. 96, 012903 (2010); 10.1063/1.3284659 Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation Growth, microstructure, and ferroelectric properties of Pb ( Zr 0.4 Ti 0.6 ) O 3 ∕ Pb Zr O 3 superlattices prepared on Sr Ti O 3 (100) substrates by pulsed laser depositionThe hysteretic properties of metal-ferroelectric-semiconductor (MFS) structures based on Pb(Zr 0.2 Ti 0.8 )O 3 (PZT) and ZnO films were studied with respect of the quality of the PZT-ZnO interface. The films were grown by pulsed laser deposition (PLD) on platinized silicon (Pt/Si) substrate and on single crystal, (001) oriented SrTiO 3 (STO) substrates. The structural analysis has revealed that the PZT-ZnO stack grown on single crystal STO is epitaxial, while the structure grown on Pt/Si has columnar texture. The temperature change of the capacitance-voltage (C-V) hysteresis direction, from clockwise at low temperatures to counter clockwise at high temperatures, was observed at around 300 K in the case of the MFS structure grown by PLD on Pt/Si substrate. This temperature is lower than the one reported for the case of the PZT-ZnO structure grown by sol-gel on Pt/Si substrate (Pintilie et al., Appl. Phys. Lett. 96, 012903 (2010)). In the fully epitaxial structures the C-V hysteresis is counter clockwise even at 100 K. These findings strongly points out that the quality of the PZT-ZnO interface is essential for having a C-V hysteresis of ferroelectric nature, with negligible influence from the part of the interface states and with a memory window of about 5 V at room temperature. V C 2012 American Institute of Physics. [http://dx.

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Section: Results and Disscusionmentioning

confidence: 97%

The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure

Pintilie

Pasuk

Ibanescu

et al. 2012

Journal of Applied Physics

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“…The capacitor exhibits a characteristic capacitance ( C )–voltage ( V ) hysteresis loop arising from the ferroelectric switching of the epitaxially grown PVDF‐TrFE film, as shown in Figure b. The voltage‐dependent accumulation and depletion of holes in the rubrene crystal are responsible for the high and low capacitance levels of the capacitor, respectively . The window of the hysteresis loop depends on the coercive voltage of the ferroelectric layer.…”

Section: Resultsmentioning

confidence: 99%

Epitaxially Grown Ferroelectric PVDF‐TrFE Film on Shape‐Tailored Semiconducting Rubrene Single Crystal

Lee

Kim

Jeong

et al. 2018

Small

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Epitaxial crystallization of thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) films is important for the full utilization of their ferroelectric properties. Epitaxy can offer a route for maximizing the degree of crystallinity with the effective orientation of the crystals with respect to the electric field. Despite various approaches for the epitaxial control of the crystalline structure of PVDF-TrFE, its epitaxy on a semiconductor is yet to be accomplished. Herein, the epitaxial growth of PVDF-TrFE crystals on a single-crystalline organic semiconductor rubrene grown via physical vapor deposition is presented. The epitaxy results in polymer crystals globally ordered with specific crystal orientations dictated by the epitaxial relation between the polymer and rubrene crystal. The lattice matching between the c-axis of PVDF-TrFE crystals and the (210) plane of orthorhombic rubrene crystals develops two degenerate crystal orientations of the PVDF-TrFE crystalline lamellae aligned nearly perpendicular to each other. Thin PVDF-TrFE films with epitaxially grown crystals are incorporated into metal/ferroelectric polymer/metal and metal/ferroelectric polymer/semiconductor/metal capacitors, which exhibit excellent nonvolatile polarization and capacitance behavior, respectively. Furthermore, combined with a printing technique for micropatterning rubrene single crystals, the epitaxy of a PVDF-TrFE film is formed selectively on the patterned rubrene with characteristic epitaxial crystal orientation over a large area.

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“…Capacitance-voltage (C-V) measurements, were anticlockwise for all the samples, and didn't exhibit any signature of a depletion layer, which would lead to an additional series capacitance leading to a decrease in the capacitance for one of the biases 14,15 . Below, we show the C-V measurements for the PZT0 and PZT25 samples measured at 10 kHz.…”

Section: C) Capacitance-voltagementioning

confidence: 99%

Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

Ghosh

Koster

Rijnders

2016

Adv Funct Materials

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Traditionally thermodynamically bistable ferroic materials are used for nonvolatile operations based on logic gates (e.g., in the form of field effect transistors). But, this inherent bistability in these class of materials limits their applicability for adaptive operations. Emulating biological synapses in real materials necessitates gradual tuning of resistance in a nonvolatile manner. Even though in recent years few observations have been made of adaptive devices using a ferroelectric, the principal question as to how to make a ferroelectric adaptive has remained elusive in the literature. Here, it is shown that by locally controlling the nucleation energy distribution at the ferroelectric–electrode interface multiple‐addressable states in a ferroelectric can be created, which is necessary for adaptive/synaptic applications. This is realized by depositing a layer of nonswitchable ZnO on top of thin film ferroelectric PbZr x Ti(1– x )O3. This methodology of interface‐engineered ferroelectric should enable realising brain‐like adaptive/synaptic memory in complementary metal‐oxide‐semiconductor (CMOS) devices. Furthermore, the temporally stable multistability in ferroelectrics should enable the designing of multistate memory and logic devices.

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Capacitance-voltage modeling of metal-ferroelectric-semiconductor capacitors based on epitaxial oxide heterostructures

Cited by 21 publications

References 16 publications

The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure

The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure

Epitaxially Grown Ferroelectric PVDF‐TrFE Film on Shape‐Tailored Semiconducting Rubrene Single Crystal

Multistability in Bistable Ferroelectric Materials toward Adaptive Applications

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