2018
DOI: 10.1038/s41467-018-05677-5
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Capacitive neural network with neuro-transistors

Abstract: Experimental demonstration of resistive neural networks has been the recent focus of hardware implementation of neuromorphic computing. Capacitive neural networks, which call for novel building blocks, provide an alternative physical embodiment of neural networks featuring a lower static power and a better emulation of neural functionalities. Here, we develop neuro-transistors by integrating dynamic pseudo-memcapacitors as the gates of transistors to produce electronic analogs of the soma and axon of a neuron,… Show more

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Cited by 228 publications
(157 citation statements)
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References 62 publications
(66 reference statements)
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“…[84,85] A SiO x RRAM device can generate controlled voltage transients, which resemble spike-like responses. [41,96,97] Importantly, these devices relax back to their highly resistive off state spontaneously (without the need of RESET operation) after firing, closely resembling the repolarization process of biological [75] Copyright 2016, Springer Nature. Metal filament-based CBRAM-like devices (diffusive memristors) have also been proved feasible to achieve the integrate-and-fire function.…”
Section: Artificial Neuronsmentioning
confidence: 97%
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“…[84,85] A SiO x RRAM device can generate controlled voltage transients, which resemble spike-like responses. [41,96,97] Importantly, these devices relax back to their highly resistive off state spontaneously (without the need of RESET operation) after firing, closely resembling the repolarization process of biological [75] Copyright 2016, Springer Nature. Metal filament-based CBRAM-like devices (diffusive memristors) have also been proved feasible to achieve the integrate-and-fire function.…”
Section: Artificial Neuronsmentioning
confidence: 97%
“…Wang et al integrated the Ag diffusive memristors onto the gate of a transistor, which then becomes the active front end of an "axon" for a stochastic LIF neuron emulator (Figure 7b). [41,96] In addition, both ferroelectric field-effect transistors (FeFETs) relying on ferroelectric polarization switching and MRAM devices relying on magnetization switching have also been employed to emulate biological neuron behaviors. Input signals are integrated by the memristor neuron that mimics dendritic spatial and temporal summation.…”
Section: Artificial Neuronsmentioning
confidence: 99%
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“…In the past few years, ionotronic transistors or memristors were proposed to mimic advanced neural functions. By connecting pressure sensors and oscilloscope with neuromorphic devices and adoping mathematical modeling and software simulation, advanced neural functions are simulated, including logic function, image memorization, pattern recognition, face recognition, classic conditioning, tactile‐perception system, etc. In this section, we shortly discuss these achievements.…”
Section: Advanced Neural Functions Based On Ionotronic Neuromorphic Dmentioning
confidence: 99%
“…Electron. It is noteworthy that some LIF neurons with tunable integration time have been realized using memcapacitors [223,224] or pseudo-memcapacitors (a diffusive memristive device with a series capacitor) [225] to replace normal capacitors. 2019, 5,1900287 its threshold, and soon, the capacitor performs discharging through the memristive device (DL loop in Figure 18b) and induces the plunge of the voltage across the memristive device resulting in it recovering to high resistance.…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%