Capacitor less dram cell design for high performance embedded system

Asthana, Prateek; Mangesh, Sangeeta

doi:10.1109/icacci.2014.6968474

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…The RS or RRAM devices are also referred to as memristors. In the literature, three types of electronic memory devices are reported based on the different structures such as transistor, capacitor, and resistor . For such devices, different functional materials can be synthesized by using various physical and chemical synthesis techniques. − Different types of materials have been explored for the study of memristors which include organic and inorganic materials as switching layers .…”

Section: Introductionmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

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In recent years, the emergence of memory devices, especially resistive random-access memories (RRAM), has been a front-runner in many technological applications. This is due to its high-speed operation, structural simplicity, low power consumption, scalability potential, and high-density memory storage features. To develop an efficient and miniaturized memory device based on the resistive switching effect, it is necessary to study the range of materials and their fabrication techniques. In this review article, we have summarized the diverse organic and inorganic materials and their resistive switching performance. Furthermore, we reviewed some potential materials for next-generation resistive switching devices. In the resistive switching device fabrication front, numerous physical, chemical, and biological-based synthesis techniques were briefly reviewed. The influence of preparative parameters was also discussed. Finally, the current status and future directions of this field are discussed. The present review article provides important details of the resistive switching effect, promising organic and inorganic materials, and various fabrication techniques to improve the device's performance for memory applications.

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Section: Introductionmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

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“…While the retention time also tends to decrease slightly, this means the memory has to be refreshed after a slightly smaller duration [11].…”

Section: Analysis Of Dram Designsmentioning

confidence: 99%

“…The improvement in data rate consists of improvement in read access time, write access time, and retention time. These improvements will help in gaining a DRAM cell design that will be capable of giving a high performance in terms of delay and power consumptions [11,12].…”

Section: Advanced Electronic Circuits -Principles Architectures and mentioning

confidence: 99%

High-Speed Electronic Memories and Memory Subsystems

Asthana¹,

Mishra²

2018

Advanced Electronic Circuits - Principles, Architectures and Applications on Emerging Technologies

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Memories have played a vital role in embedded system architectures over the years. A need for high-speed memory to be embedded with state-of-the-art embedded system to improve its performance is essential. This chapter focuses on the development of highspeed memories. The traditional static random access memory (SRAM) is first analyzed with its different variant in terms of static noise margin (SNM); these cells occupy a larger area as compared to dynamic random access memory (DRAM) cell, and hence, a comprehensive analysis of DRAM cell is then carried out in terms of power consumption, read and write access time, and retention time. A faster new design of P-3T1D DRAM cell is proposed which has about 50% faster reading time as compared to the traditional three-transistor DRAM cell. A complete layout of the structure is drawn along with its implementation in a practical 16-bit memory subsystem.

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