2007
DOI: 10.1002/pssc.200675432
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Capture kinetics at deep‐level electron traps in GaN‐based laser diode

Abstract: Two deep-level electron traps, E1 at E C − 0.23 eV and E2 at E C − 0.55 eV, have been revealed by means of deep-level transient spectroscopy (DLTS) in a GaN-based laser-diode heterostructure grown by metalorganic vapour-phase epitaxy on a bulk GaN substrate. The two traps represent different electron capture behaviours. The E1 trap, which exhibits the logarithmic capture kinetics and the DLTS-line shape characteristic of band-like electron states, is attributed to the core states of threading dislocations in a… Show more

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Cited by 7 publications
(8 citation statements)
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“…More recent results by Chung et al [14] and Cho et al [10], showing that the concentration of this trap could be effectively suppressed by In doping, support this assignment. Very recently, this trap has been also revealed as the dominant deep-level defect in MOVPE-grown LD heterostructure [11]. However, in our present results the T2 trap concentration is the smallest of all deep-level traps recorded in the DLT spectra.…”
Section: Discussioncontrasting
confidence: 47%
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“…More recent results by Chung et al [14] and Cho et al [10], showing that the concentration of this trap could be effectively suppressed by In doping, support this assignment. Very recently, this trap has been also revealed as the dominant deep-level defect in MOVPE-grown LD heterostructure [11]. However, in our present results the T2 trap concentration is the smallest of all deep-level traps recorded in the DLT spectra.…”
Section: Discussioncontrasting
confidence: 47%
“…The appearance of dislocations in the LD heterostructure grown on the lattice-matched GaN substrate with a very low dislocation density may arise due to the growth of lattice-mismatched AlGaN and InGaN layers, which can give rise to dislocation generation during strain relaxation. Likely the same trap, called E1, was recently revealed in the DLT spectra measured in n-type GaN layers grown by metal-organic vapour-phase epitaxy (MOVPE) on sapphire [9,10] and in MOVPE-grown LD heterostructure [11], and attributed to the core states of threading dislocations.…”
Section: Discussionmentioning
confidence: 58%
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“…In this experiment, the substrate potential ( V B ) was set to 0 V. Figures a and b depicts the time‐resolved stress/recovery transients acquired applying an OFF‐state stress bias at ( V G ; V DS ; V B ) = (−8 V; 25 V; 0 V). Both stress and recovery kinetics rely on single exponential law, thus suggesting the involvement of bulk point‐defects . Thanks to OTF characterization, it can be noticed that not only the rate (i.e., the inverse of the fitting exponential time constant) of the R ON recovery, but also the rate of the R ON increase is thermally activated.…”
Section: Charge‐trapping Mechanismsmentioning
confidence: 99%
“…The sign of each peak indicates whether the observed defect acts as a trap for minority or majority carriers, while the measured capacitance is proportional to defect concentration. DLTS-based methods are very efficient in defect determination in different semiconductor materials and devices, such as diodes [85,86], Schottky diodes [68,69] and rectifiers [87,88], solar cells [5,89,90], bipolar [91] and HEMT transistors [92] or laser structures [93,94]. A digital modification of DLTS, the deep level transient Fourier spectroscopy (DLTSFS) method measures the complete capacitance transient as a C(t) array and transfers the data into a computer system.…”
Section: Deep Level Transient Fourier Spectroscopy Investigationsmentioning
confidence: 99%