Caractérisation de l'interface isolant InP formé en oxydation plasma par l'étude des transitoires de capacité DLTS et DDLTS

Bath, A.; Bouchikhi, Benachir

doi:10.1051/rphysap:0198800230107100

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…Concerning point (i), the spectrum will be analysed along the lines of the procedure elaborated by Yamasaki et al [ll] in connection with capacitance transients in response to small-signal excitation of MIS structures. The procedure proved useful, as reported earlier by Katsnbe et al [12] and Lepley et al [4]. It can easily be modified for charge DLTS [7], yielding for a given U , and T , =…”

Section: As Demonstrated By He Et Al [Si a C-u Plot Maymentioning

confidence: 62%

Transient charging of MIS diodes prepared by Al overlayer induced plasma oxidation of InP

Thurzo

Pinčík

Harmatha

1992

Semicond. Sci. Technol.

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Resistance of InP substrates to oxidation via plasma anodization can be suppressed by AI-coating of t h e substrates ( 6 4 nm) prior to the plasma treatment. In the temperature range 150-200 "C thicknesses of the InP native oxide up lo -50 nm could be achieved. Resulting MOS diodes were characterized by combined feedback charge capacitance and current OLTS measurements. For a zero applied bias, the Fermi level at the surface is unpinned and positioned about 0.1 eV below the conduction band minimum. The density of interface States rises steeply when approaching the conduction band edge, preventing the devices from reaching a true accumulation of electrons at the InP/oxide interface.

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Section: As Demonstrated By He Et Al [Si a C-u Plot Maymentioning

confidence: 62%

Transient charging of MIS diodes prepared by Al overlayer induced plasma oxidation of InP

Thurzo

Pinčík

Harmatha

1992

Semicond. Sci. Technol.

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Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film

Ahaitouf¹,

Bath²

1991

Phys. Stat. Sol. (a)

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The bias dependence is studied of the photoluminescence (PL) intensity of metal–insulator–n‐InP structures obtained by growing native oxide by a plasma bilayer technique. The MIS structures exhibit an interface density of states dominated by a discrete level at about 0.45 eV below the conduction band. The PL intensity is thus calculated by using the Stevenson‐Keyes expression for the surface recombination velocity S. By comparison of the experimental results and the calculated curves, it is concluded that S is small, in any case lower than about 104 cm/s. The PL changes, as a function of the bias voltage, can be understood essentially in terms of the variations of the width of the space charge layer.

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Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

et al. 1997

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Caractérisation de l'interface isolant InP formé en oxydation plasma par l'étude des transitoires de capacité DLTS et DDLTS

Cited by 4 publications

References 13 publications

Transient charging of MIS diodes prepared by Al overlayer induced plasma oxidation of InP

Transient charging of MIS diodes prepared by Al overlayer induced plasma oxidation of InP

Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film

Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

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