Photoluminescence intensity study of n-InP MIS structures realized with a native oxide insulator film

Abstract

The bias dependence is studied of the photoluminescence (PL) intensity of metal–insulator–n‐InP structures obtained by growing native oxide by a plasma bilayer technique. The MIS structures exhibit an interface density of states dominated by a discrete level at about 0.45 eV below the conduction band. The PL intensity is thus calculated by using the Stevenson‐Keyes expression for the surface recombination velocity S. By comparison of the experimental results and the calculated curves, it is concluded that S is small, in any case lower than about 104 cm/s. The PL changes, as a function of the bias voltage, can be understood essentially in terms of the variations of the width of the space charge layer.

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

“…The PL response light is focused by an optic fiber and transmitted to a monochromator with a matrix of charge-coupled device photodetectors enabling the acquisition of a wide spectrum. The PL intensity variations versus applied voltage, I PL (V G ), are measured using an experimental set-up described elsewhere [7].…”

Photoluminescence intensity study of n-InP diodes in the accumulation regime

“…The experimental setup used in this study has been described previously [4]. PL intensity measurements were performed at room temperature on n-InP MIS structures obtained by growing a native oxide by a plasma bilayer technique [ll].…”

“…In a first step, the ratio (8) has been calculated using a value of hole diffusion length LP = 1.6 pm [13]. The corresponding result in depletion has been obtained following the method described in [4]. The whole curve has been reported in Fig.…”

“…It was shown that the change of the PL intensity, with the variation of the bias voltage for a MIS structure in depletion, can be related to variations of surface recombination velocity and/or to changes of the width of the space charge region [3]. In a previous work [4], we have shown that the PL intensity variations, as a function of the bias voltage, can be understood essentially in terms of the variations of the space charge layer width, because it was found that the surface recombination velocity was low. By this PL technique and the modulated PL technique [5], the Schottky barrier height of Au/n-InP structures was measured and compared to the one deduced from electrical measurements such as current or capacitance measurements.…”