Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

“…The presence of slow traps can be associated with the VO h-BN/GaN interface. The Dit for the slow traps related to the BN/GaN interface is comparable to the h-BN/GaN interface trap density reported elsewhere (~2×10 12 cm -2 eV -1 at EC-ET of 0.4 eV) using the PLS technique[101] on MW-PECVD deposited h-BN[91].…”

“…xvi sample thickness, at room temperature [101]. Solid lines are the theoretical calculation using different AlN defect densities.…”