of pure g-C 3 N 4 for hydrogen production was relatively low, although the band gap ( E g ≈ 2.7 eV) and band positions of g-C 3 N 4 match well with the intrinsic requisites for photocatalytic water splitting under visible light. [ 6,8 ] To this end, previous attempts have been mainly focused on improving charge carrier migration and separation in g-C 3 N 4 via three aspects: (1) constructing band structure aligned heterojunctions between g-C 3 N 4 and other semiconductor photocatalysts (Cu 2 O, [ 10 ] N-CeO x , [ 11 ] ZnFe 2 O 4 , [ 12 ] CNS, [ 13 ] etc.) for effi cient charge separation, (2) combining g-C 3 N 4 with conductive materials (graphene, [ 14 ] CNTs, [ 15 ] etc.), and (3) designing unique nanostructures (nanorods, [ 16,17 ] nanosheets, [ 18,19 ] mesoporous nanostructures, [20][21][22] etc.) for fast charge carrier migration. However, the photocatalytic effi ciencies of these modifi ed g-C 3 N 4 were still not high enough for practical applications in effi cient solar energy conversion systems.It has been well established that the mismatch between the relatively long penetration depth of photons and the short mean free path of charge carriers signifi cantly account for the high-rate recombination of electrons and holes in semiconductors. [ 23,24 ] Therefore, the charge carrier recombination could be effectively inhibited if the travel distance for charge carriers to transfer to the surface active sites is minimized. Recent development of photocatalysts modifi ed with plasmonic nanostructures of noble metals (such as Au, [25][26][27][28] Ag, [ 29,30 ] etc.) offered a new opportunity to fulfi ll this strategy. These metal nanoparticles (NPs) characteristic of the localized surface plasmon resonance (LSPR) effect can act as nanoantennas for light trapping and form a locally enhanced electromagnetic fi eld in the proximity of the metal NPs. Under irradiation, especially when the LSPR absorption of the metal NPs is partially overlapped with the optical absorption of the semiconductor, [31][32][33] the LSPR induced plasmon resonance energy transfer (PRET) from the plasmonic metal to the nearby semiconductor will preferentially excite charge carriers in the metal/semiconductor interface, namely, the near-surface region of the semiconductor. Then the transfer distance of the photoexcited charge carriers to the surface reactive sites for photocatalytic reactions would be shortened. Watanabe and co-workers demonstrated that the enhanced photocatalytic activity over Ag NPs incorporated TiO 2 photocatalyst was achieved by the LSPR induced electromagnetic fi eld amplitude of Ag NPs. [ 34 ] The consequent PRET effect favored the charge carrier formation in the near-surface region of TiO 2 , thus the