Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

Abstract

In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the 2 basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.Deep Jariwala is currently working as a graduate student under supervision of Prof. Mark

Theoretical estimation of the rate of photoinduced charge transfer reactions in triphenylamine C60 donor–acceptor conjugate

“…[1][2][3][4][5][6][7][8] The interest in fullerene DSSCs is mainly due to the fact that they are a low-cost replacement for silicon-based solar cells and they are associated to profitable manufacturing and negligible toxicity. [9][10][11][12][13][14] The reference system for fullerene DSSCs is the blend of poly(3-hexylthiophene) (P3HT) and [6,6]phenyl-C61-butyric acid methyl ester (PCBM).…”

Gate-tunable carbon nanotube–MoS 2 heterojunction p-n diode

“…Both SL-MoS 2 and s-SWCNTs have direct band gaps (31, 32) and exhibit signatures of bound excitonic states in their absorption spectra (2,31). Therefore, photocurrent generation is expected on optical irradiation of p-n heterojunctions based on these materials.…”

Optimization of graphene dry etching conditions via combined microscopic and spectroscopic analysis

“…[1][2][3][4] In particular, its unique combination of superlative mechanical 5 and electronic properties [6][7][8] makes it a promising candidate for electronic applications. 2,6,7,9,10 Since electronic devices require carefully defined geometries, graphene is inevitably subjected to lithographic pattering and etching during fabrication. Furthermore, since single-layer graphene is oneatom thick, any residues from fabrication can significantly influence charge transport and electronic device performance.…”