Carbon‐Nanotube‐Enabled Vertical Field Effect and Light‐Emitting Transistors

Liu, Bo; McCarthy, Mitchell A.; Yoon, Youngki; Kim, Do Young; Wu, Zhuangchun; So, Franky; Holloway, Paul H.; Reynolds, John R.; Guo, Jing; Rinzler, Andrew G.

doi:10.1002/adma.200800601

Cited by 111 publications

(118 citation statements)

References 12 publications

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“…Moreover, the on/off ratio is as high as ≈ 10 6 , which is among the best values reported in vertical, shortchannel OFETs. [22][23][24][25] The subthreshold region shows relatively small swing S of 1.6 V per decade with essentially no hysteresis, indicating that the interface between the well-aligned DNTT fi lms and the gate insulator fi lm is formed with minimized bending direction. Essentially no deterioration was observed in the drain current even when the devices were bent to the bending radii as small as 8 mm.…”

Section: Doi: 101002/adma201101179mentioning

confidence: 98%

High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

et al. 2011

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Section: Doi: 101002/adma201101179mentioning

confidence: 98%

High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

et al. 2011

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“…One serious drawback presented by these LiF devices was the large leakage current of the capacitor, 11 corresponding to a high gate current in the FET, which under such conditions practically operate much more as a two-terminal device. The same architecture was also more recently used for organic light-emitting transistors on plastic, 14 SiO 2 -gate transistors with carbon nanotubes for charge injection enhancement 15 and transistors based on other material combinations. [16][17][18][19] Apart from the above cited problem, the use of LiF as a gate insulator implies in high gate capacitance, which is a necessary characteristic in the conventional architecture organic FETs for the conducting channel formation.…”

mentioning

confidence: 89%

Low voltage vertical organic field-effect transistor with polyvinyl alcohol as gate insulator

Rossi¹,

Seidel²,

Machado³

et al. 2011

Journal of Applied Physics

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We report the preparation of low gate leakage current organic field effect transistors in vertical architecture using polyvinyl alcohol as gate insulator and C60 fullerene as n-type semiconductor in devices with gate, source, and drain electrodes of Al. Intermediate electrode and top electrode operate, respectively, as source and drain, or vice-versa, depending on polarity. In these devices the intermediate electrode (source or drain) is permeable to the electric field produced by the gate so that increased drain current is obtained at either increasingly negative gate voltage when the source is the intermediate electrode or increasingly positive gate voltage when the drain is the intermediate electrode.

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“…[ 20 ] Later on, Liu et al introduced a carbon nanotube-based source electrode with low DOS in organic VFETs for a wide range of organic semiconductors. [ 21 ] Carbon nanotubes allow new mechanisms for transistor operation such as the tuning of the gate modulated energy barrier. Graphene, similar to carbon nanotubes in its electrical and mechanical properties, has additional advantages over them due to the large-scale availability (chemical vapor deposition (CVD)-grown graphene) of chemically inert high quality 2D surfaces.…”

mentioning

confidence: 99%

Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

Parui

Pietrobon

Ciudad

et al. 2015

Adv Funct Materials

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wileyonlinelibrary.comGraphene, [ 11 ] a one-atom thick zero band gap semiconductor has allowed the development of new electronic device schemes such as the graphene-barristor, [ 12 ] the graphene-vertical-fi eld-effecttransistor (VFET), [13][14][15][16] and the graphenebase hot electron transistor. [ 17 ] In organic electronics, graphene can be an ideal choice to use as the injector (or source) electrode for a VFET since its Fermi level, its corresponding work function and its available low density of states (DOS) [ 18 ] can all be easily modulated, providing a tunable energy barrier which eventually controls the device operation. In addition, the electric fi eld produced by a gate electrode will extend into the organic semiconductor, as the monolayer thickness of graphene is insuffi cient to fully screen it. [ 13,19 ] In order to increase the performance of organic thin fi lm transistors (OTFT) compared with the inorganic counterparts, a unique vertical architecture with a molecular semiconductor (C 60 ) was fi rst demonstrated using a thin and rough (with a roughness comparable to the thickness) metal electrode. [ 20 ] A clear advantage of the vertical over the lateral organic transistor geometry is that the channel length is controlled by the thickness of the organic layer and the devices can be downsized in both the lateral and the vertical directions. In the case of a perforated metallic source electrode, the electric fi eld can directly access the metal/organic interface which causes the energy level realignment (similar to the band bending in inorganic semiconductor) in the organic semiconductor. Although Ma and Yang have reported a large on/off current ratio (≈10 6 ), the high DOS and the fi xed work function of the metallic electrode (injector) limits its application to a few organic semiconductors. [ 20 ] Later on, Liu et al. introduced a carbon nanotube-based source electrode with low DOS in organic VFETs for a wide range of organic semiconductors. [ 21 ] Carbon nanotubes allow new mechanisms for transistor operation such as the tuning of the gate modulated energy barrier. Graphene, similar to carbon nanotubes in its electrical and mechanical properties, has additional advantages over them due to the large-scale availability (chemical vapor deposition (CVD)-grown graphene) of chemically inert high quality 2D surfaces. [ 14,22 ] On the other hand, fullerene (C 60 ) is one of the most widely studied molecular semiconductors [ 2,5,20,[23][24][25] and a common choice as an active media for transistors. C 60 has an energy gap ( E g = 1.7 eV), between its highest occupied molecular orbital Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor JunctionSubir Parui , * Luca Pietrobon , David Ciudad , Saül Vélez , Xiangnan Sun , Fèlix Casanova , Pablo Stoliar , and Luis E. Hueso * The formation of an energy-barrier at a metal/molecular semiconductor junction is a universal phenomenon which limits the performance of many molecular semiconductor-based electronic devices, from fi eld-effect trans...

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Carbon‐Nanotube‐Enabled Vertical Field Effect and Light‐Emitting Transistors

Cited by 111 publications

References 12 publications

High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

Low voltage vertical organic field-effect transistor with polyvinyl alcohol as gate insulator

Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction

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