Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates

Svensson, Johannes; Lindahl, Niklas; Huang, Yun; Seo, Miri; Midtvedt, Daniel; Tarakanov, Yury A.; Lindvall, Niclas; Nerushev, Oleg; Kinaret, Jari M.; Lee, SangWook; Campbell, Eleanor E. B.

doi:10.1021/nl201280q

Cited by 21 publications

(20 citation statements)

References 35 publications

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“…The combination of graphene electronic-and mechanical properties is interesting for both fundamental studies and electronic applications. [4][5][6][7][8][9] Pristine graphene is charge neutral and exhibits excellent electronic properties. However, charged impurities, surface contaminants, and structural deformation contribute to local doping.…”

Section: Introductionmentioning

confidence: 99%

Cleaning graphene using atomic force microscope

Lindvall

Kalabukhov

Yurgens

2012

Journal of Applied Physics

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We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility. V

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Section: Introductionmentioning

confidence: 99%

Cleaning graphene using atomic force microscope

Lindvall

Kalabukhov

Yurgens

2012

Journal of Applied Physics

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“…A relation between the critical pressure and the bending rigidity of bilayer graphene provides a measure of the latter. Even when the graphene layer is not buckled initially, a strong enough electrostatic force can produce irreversible buckling [28]. A spontaneous buckling effect ("mirror buckling") is also found by Xu et al in [29].…”

Section: Introductionmentioning

confidence: 73%

“…The STM keeps a constant current and a variable potential between the tip and the sample. Once the current is fixed at a sufficiently high value, the sample buckles when the potential increases, similarly to the experiments in [27,28].…”

Section: Introductionmentioning

confidence: 73%

Critical radius and temperature for buckling in graphene

Bonilla

Ruiz-García

2016

Phys. Rev. B

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In this work, we find an analytical flat-membrane solution to the saddle point equations, derived by Guinea et al. [Phys. Rev. B 89, 125428 (2014)], for the case of a suspended graphene membrane of circular shape. We also find how different buckled membrane solutions bifurcate from the flat membrane at critical temperatures and membrane radii. The saddle point equations take into account electron-phonon coupling and this coupling provides a residual stress even for a flat graphene layer. Below a critical temperature (which is exceedingly high for an infinite layer) or above a critical size that depend on boundary conditions, different buckling modes that may be the germ of rippling appear. Our results provide the opportunity to develop new feasible experiments dealing with buckling in small suspended graphene membranes that could verify them. These experiments may also be used to fit the phonon-electron coupling constant or the bending energy. PACS numbers: 63.22.Rc, 68.60.Dv, 65.80.Ck, 62.20.mq 1 arXiv:1603.03961v2 [cond-mat.mes-hall]

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“…A trench pattern, which has 1 μm depth and 70 μm length was pre‐defined on a Si/SiO 2 substrate. An individual ZnO microwire was deposited on top of the trench structure using the microcontact transfer technique . The nanoscale electrodes were electrically connected on top of the transferred ZnO microwire by using the PMMA ribbon technique.…”

Section: Resultsmentioning

confidence: 99%

Integrating ZnO Microwires with Nanoscale Electrodes Using a Suspended PMMA Ribbon for Studying Reliable Electrical and Electromechanical Properties

Kim

Huang

Yoon

et al. 2014

Advanced Energy Materials

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A simple method for making electrical connections to ZnO microwires is reported. By using a suspended poly(methyl methacrylate) (PMMA) ribbon, it is shown that it is possible to electrically contact 1-2 µm diameter ZnO microwires with metal electrodes that are only 90 nm thick. The contact resistances of ZnO microwire-based electronic devices fabricated by this method are lower than those of devices fabricated by standard electronbeam lithography and evaporation processes. As one of the possible device applications from this fabrication method, suspended ZnO microwire-based electromechanical devices are produced and their piezoelectric properties are investigated. Piezoelectric-induced current is detected when the suspended microwires are induced to vibrate at their resonant frequency. This fabrication method can be readily and generally applied to prepare nanoscale electrodes on micrometer-sized materials and provides a convenient means for studying their electrical and electromechanical phenomena in a reliable manner.as well as electromechanical properties of microstructures in a reliable and a controllable manner.

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Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates

Cited by 21 publications

References 35 publications

Cleaning graphene using atomic force microscope

Cleaning graphene using atomic force microscope

Critical radius and temperature for buckling in graphene

Integrating ZnO Microwires with Nanoscale Electrodes Using a Suspended PMMA Ribbon for Studying Reliable Electrical and Electromechanical Properties

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