Carbonization process for low-temperature growth of 3C-SiC by the gas-source molecular-beam epitaxial method

Abstract

Using the carbonization process, single-crystalline SiC films were grown at substrate temperature (Tsub) in the range of 750–1050 °C by the gas-source molecular-beam epitaxial method. This process was performed by using C2H4 gas and a special growth method in which the temperature was raised at a predetermined rate (RT) during growth. To realize the growth of single-crystalline carbonized films, it was found that a C2H4 gas pressure PC2H4=8×10−5 Torr and rising rate RT=25–25/3 °C/min were necessary. After the carbonization process, essential growth of SiC films using SiHCl3 and C2H4 gases in the range of gas pressure ratios PSiHCl3/PC2H4= (1)/(3) –5 (PSiHCl3=1–5×10−5 Torr) at Tsub=1000 °C was performed. In these all experimental ranges, single-crystalline 3C-SiC films could be grown.

Growth and Properties of Core‐Shelled SiC–SiO2 Nanowires Using Chemical Vapor Deposition

“…5E, where the precipitate is on a (1-11) plane of the FeSi. As the precipitation continues, it grows into a nanowire whose growth direction, however, is not along the [1][2][3][4][5][6][7][8][9][10][11] direction but along the [111] direction. This is similar to the growth of carbon nanofibers with a fishbone structure.…”

“…Meng et al 8 produced a SiC/SiO 2 core-shell structure using the vapor-liquid-solid mechanism at a temperature of 12501C. There were also several other instances where only SiC nanowires were obtained using, for example, molecular beam expitaxy, 9 chemical vapor deposition, 10 or a carbon nanotube (CNT) template. 11 Furthermore, there were reports on cathodoluminescence (CL) of SiC single-crystal wafers 12,13 or epitaxial layers 14 in the literature.…”

Diffusivity of adatoms on plasma-exposed surfaces determined from the ionization energy approximation and ionic polarizability

“…These two substrates will give similar results on the influx concentration ratio because D Si S > D C S is always true for both Si or SiC substrates, as predicted above. However, the experimental observations [44,45,46,47,48,49] 4 . Moreover, this comes as no surprise due to larger surface diffusivity for Si adatoms and lower SiSi bond strength, as compared to C adatoms.…”

Carbonization-induced SiC micropipe formation in crystalline Si

“…Different hydrocarbon gases were used to react with silicon surfaces at elevated temperatures, e.g., in high and ultrahigh vacuum systems, 1,2 in CVD reactors of different kinds 3-8 and by gas-source molecular beam epitaxy ͑MBE͒. [9][10][11] Recently, SiC films were even grown by magnetron sputtering 12 and via C 60 precursor reaction with Si surfaces. 13,14 Some progress in this field has been made by introducing the two-step CVD method, 3 gradually reducing the reaction temperatures 9-12 and avoiding disturbing growth defects under special growth conditions chosen.…”