Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications

Casias, Lilian K.; Morath, Christian P.; Steenbergen, Elizabeth H.; Webster, Preston T.; Kim, Jin K.; Cowan, Vincent M.; Balakrishnan, Ganesh; Krishna, Sanjay

doi:10.1016/j.infrared.2018.11.024

Cited by 6 publications

(5 citation statements)

References 27 publications

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“…Namely, E a = −14 meV in the first layer and E a = −8 meV in the second one, counted from the top of the heavy‐hole band. These values are different from the literature data of E a ≈ 20 meV . However, it is well known that as the dopant concentration increases, the dopants start to interact and form an impurity band .…”

contrasting

confidence: 95%

“…Fortunately, it is not the case for T < 30 K and T > 200 K; therefore, in the following, we concentrate on the results obtained at low (Set I) and high (Set IV) temperatures. Judging from the partial concentrations and mobilities, H 1 spectrum is associated with heavy holes, whereas H 2 peaks originate from the presence of light holes, in agreement with the recent results of Casias et al for very similar 2 μm‐thick InAs 0.91 Sb 0.09 layer, acceptor doped at 3 × 10 18 cm −3 obtained at T = 300 K. However, it is not clear what is the origin of the strong splitting of heavy‐hole spectra, observed at low temperatures, which gradually disappears when peaks broaden and start to overlap.…”

supporting

confidence: 85%

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Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Wróbel

Umana‐Membreno

Boguski

et al. 2020

Physica Rapid Research Ltrs

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High‐quality Be‐doped InAs layer grown by molecular beam epitaxy on GaAs substrate has been examined via magnetotransport measurements and high‐resolution quantitative mobility spectrum analysis (HR‐QMSA) in the range of 5–300 K and up to 15 T magnetic field. The results show four‐channel conductivity and essential splitting of the most populated hole‐like channel below 55 K. It is concluded that origin of such effect results from the locally strain‐induced interlayer, which direct observation is difficult or impossible via alternative techniques. Based on the magnetotransport data analysis, the multilayer model is proposed, which is implemented into nextnano simulation, giving the proof of the argumentation correctness. These results indicate potential usefulness of HR‐QMSA technique even in the degeneration statistic regime.

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contrasting

confidence: 95%

supporting

confidence: 85%

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Wróbel

Umana‐Membreno

Boguski

et al. 2020

Physica Rapid Research Ltrs

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“…This observations could potentially lead to the conclusion, that increasing of soaking time could be beneficial from the final device point of view. 18 This phenomenon will be also interesting and will be further investigated from the point of view of carrier dynamics.…”

Section: Discussionmentioning

confidence: 98%

Carrier dynamics of type-II InAsSb/GaAsSb W-quantum wells emitting in mid-infrared

Smolka,

Rygala,

Ryczko

et al. 2024

Light-Emitting Devices, Materials, and Applications XXVIII

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Interband cascade lasers (ICLs) are highly efficient semiconductor lasers operating in the mid-infrared range. Their cascade structure of multiple quantum wells enables continuous operation at room temperature with low threshold current. This study explores the impact of tensile and compressive strain on W-QWs' electronic structure and carrier dynamics. Using transient absorption measurements on specific material structures, researchers investigated carrier lifetimes and fundamental transitions. Photoreflectance and photoluminescence measurements were also employed to study band structure and optical properties. The findings provide insights into optimizing ICL performance, improving their performance in application for gas sensing, spectroscopy, medical diagnostics, and communication.

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“…Moreover, it has been well known from the beginning of the 1970s [69,70] that narrow gap III-V semiconductors, especially InAs, creates surface electron accumulation layers. For example, Figure 11 presents band edges of p-type InAs [69] and InAsSb [71] with surface electron accumulation. There is strong electron accumulation on the InAsSb side of InAsSb/GaSb heterojunction due to the staggered type II band alignment.…”

Section: Transport Propertiesmentioning

confidence: 99%

“…Another approach is applied in the case of more complicated structures like that shown in Figure 11b. Mobility spectrum analysis and/or variable temperature and magnetic field-dependent transport analysis with multicarrier fitting models have been applied to segregate the epilayer and surface and interface layer characteristics [71].…”

Section: Transport Propertiesmentioning

confidence: 99%

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

Self Cite

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications

Cited by 6 publications

References 27 publications

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Carrier dynamics of type-II InAsSb/GaAsSb W-quantum wells emitting in mid-infrared

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

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