Carrier-density and field-dependent charge-carrier mobility in organic semiconductors with correlated Gaussian disorder

Bouhassoune, Mohammed; Mensfoort, van Slm Siebe; Bobbert, PA Peter; Coehoorn, R.

doi:10.1016/j.orgel.2009.01.005

Cited by 160 publications

(163 citation statements)

References 22 publications

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“…Correspondingly, the 1D drift-diffusion calculations were performed with the ECDM mobility function. 10 The attempt-to-jump frequency is chosen in a similar way as in Fig. 1, leading to ν 0 = 9.5 × 10 12 and 4.8 × 10 13 s −1 in the case of disorder strengths σ = 3k B T and 6k B T , respectively.…”

Section: Results For Current-voltage Characteristicsmentioning

confidence: 99%

“…n(x) and F (x) are related to each other via the Poisson equation, dF /dx = (e/ 0 r )n(x). The density, field, and temperature dependence of the local mobility μ(x) = μ(n(x),F (x),T ) is given by the EGDM or ECDM parametrization 8,10 in the case of uncorrelated or correlated disorder, respectively. The local diffusion coefficient is obtained from the local mobility by using the generalized Einstein equation.…”

Section: B One-dimensional Continuum Drift-diffusion Modelmentioning

confidence: 99%

“…For not too small injection barriers we found a fair agreement between our 3D MC results for the current and 1D drift-diffusion calculations with a mobility function based on the ECDM. 10 For high injection barriers, the inclusion of image dipoles causes a decrease of the current, owing to a decrease of the disorder close to the electrodes, which leads to a reduced injection into energetically low-lying states.…”

Section: Effects Of Short-range Coulomb Interactions On the Threementioning

confidence: 99%

“…For the case of a spatially correlated Gaussian DOS, a similar computational study of the density dependence of the mobility was performed by Bouhassoune et al 10 We will refer to this extension of the CDM as the extended correlated disorder model (ECDM). A comparison of EGDM and ECDM modeling of current-voltage characteristics of hole-only devices of conjugated polymers such as derivatives of PPV 10 and a polyfluorene-based copolymer 11 has led to the conclusion that for these polymers the intersite distance as obtained from a fit of the EGDM modeling is more realistic than the one obtained from a fit of the ECDM modeling.…”

Section: Introductionmentioning

confidence: 98%

“…8,10 In order to investigate the consistency of this approach and to study the injection of carriers in more detail, we recently performed a computational study of single-carrier devices by solving the Pauli master equation for a collection of sites representing a full three-dimensional (3D) device, including its electrodes. 15 The DOS was taken to be Gaussian and to be spatially uncorrelated, corresponding to the EGDM.…”

Section: Introductionmentioning

confidence: 99%

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Section: Results For Current-voltage Characteristicsmentioning

confidence: 99%

Section: B One-dimensional Continuum Drift-diffusion Modelmentioning

confidence: 99%

Section: Effects Of Short-range Coulomb Interactions On the Threementioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

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Effects of Gaussian Disorder on Charge‐Carrier Transport and Recombination in Organic Semiconductors

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2012

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Electronic and Optical Processes of Organic Semiconductors

Köhler

Bäßler

2015

Electronic Processes in Organic Semiconductors

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Semiconductors are, by definition, materials that are intended for use in optoelectronic devices. The most common applications of organic semiconductors encompass organic light-emitting diodes (OLEDs), organic solar cells (OSCs), and organic field-effect transistors (OFETs) (Figure 3.1).In essence, an OLED is made in a sandwich-type structure by covering a substrate sequentially with a bottom electrode, the active semiconducting material and a top electrode. Upon applying a voltage, positive and negative charges are injected from the electrodes into the semiconductor and move through it. While a part of these charges may leave the organic film at the counter electrode, having resulted in nothing but dissipated heat, some of the electrons and holes will encounter and capture each other to form an excited state that may recombine with or without light emission. The processes involved in the operation of an OLED are illustrated in Figure 3.1, along with the processes relevant for an OSC. The OSC has, in principle, the same structure as that of an OLED; yet, it operates in the reverse direction. Light is absorbed and creates excited states. Some of these states may eventually dissociate into free, mobile positive and negative charges that move to opposite electrodes where they are collected to yield a current. The photophysical mechanisms associated with OLEDs and OSC operation, such as charge injection, charge transport, electron-hole recombination, and excited state dissociation are discussed in detail in the corresponding sections of this chapter. Also included are processes relating to the excited states such as energy transfer and decay mechanisms. Issues pertaining to the fabrication, operation, characterization, and optimization of the entire device are considered in the next chapter. The same approach of chapter organization is taken concerning the OFET. The fabrication and operation of the OFET is detailed in Chapter 4, whereas this chapter covers, inter alia, the process of charge transport for the regimes of low and high charge carrier density.The generic structure of an OFET differs from the OLED/OSC structure. An OFET contains three electrodes in contrast to the two electrodes of the OLED/OSC layout. In the OFET, two electrodes, the source and the drain electrode, are separated by the active semiconductor. When a voltage is applied between the source and the drain electrode, current can, in principle, flow between them. The amount of current that flows is controlled by the third, the gate electrode that is separated from the active semiconductor by an insulator layer. If there is no voltage applied to the gate electrode, the current flow between the source and the drain is negligibly small, even when there is a potential difference between the source and the drain. The reason for this lies in the high resistivity of the organic semiconductor in combination with the device geometry. In an OLED, the electrodes are separated only by 100 nm of semiconductor, and the electrodes cover most of the semiconductor...

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Carrier-density and field-dependent charge-carrier mobility in organic semiconductors with correlated Gaussian disorder

Cited by 160 publications

References 22 publications

Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

Effects of Gaussian Disorder on Charge‐Carrier Transport and Recombination in Organic Semiconductors

Electronic and Optical Processes of Organic Semiconductors

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