Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Bennett, B. R.; Soref, Richard A.; Alamo, J.A. del

doi:10.1109/3.44924

Cited by 916 publications

(578 citation statements)

References 34 publications

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“…C is a constant involving material parameters and matrix elements between the Bloch functions at the band edges [15]. Using the above equations the changes of refractive index ( η) under different injection carrier densities in the InAs layer have been calculated.…”

Section: Vb(inasmentioning

confidence: 99%

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

Liu

et al. 2001

J. Phys.: Condens. Matter

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By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump-probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple technique, with the clear advantage of being easy to carry out, can be very useful in studying the carrier dynamics for some specific structures such as InAs ultrathin layers embedded in a GaAs matrix described here.Carrier capture and relaxation processes in InAs/GaAs quantum structures have attracted much attention due to wide physical interest [1][2][3] and potential device applications [4][5][6][7]. There have been a number of experiments [8][9][10] concerning the carrier dynamics in self-organized InAs/GaAs quantum dots (QDs) over the past few years. Various experimental methods were employed in the experiments, including the complex multiple-wavelength pump-probe technique [8], delicate up-conversion [9] and the high resolution streak camera [10]. The carrier relaxation in InAs/GaAs QDs was found to occur as fast as in higher dimensional systems, on a time scale of several picoseconds. In our previous paper [11], we demonstrated that the carrier capture process in InAs/GaAs quantum dots could be detected by a simple degenerate pump-probe technique even if the probe energy is much higher than the exciton energy levels of the InAs/GaAs system. The measured capture time was found to depend on the InAs layer thickness and the excitation density as well.In this paper we further simulate the carrier capture process by analysing the carrier dynamics based upon the rate equations and the change of the refractive index due to carrier injection according to the Kramers-Kronig relations. The calculated results were found to be 3 Corresponding author.

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Section: Vb(inasmentioning

confidence: 99%

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

Liu

et al. 2001

J. Phys.: Condens. Matter

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“…The corresponding change in refractive index is given by (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16). This equation uses the fact that the concentrations of the heavy and light holes are proportional to their effective masses raised to the three-halves power [20]. This formula gives the index of refraction change for the free holes and free electrons for all semiconductor materials lattice matched to InP.…”

Section: Free-carrier Absorptionmentioning

confidence: 99%

“…The four transition energies used in (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) can be determined by momentum conservation and are given by (2-26). The conduction band and valence band energies are given relative to the respective band edges.…”

Section: Band Filling and Bandgap Shrinkagementioning

confidence: 99%

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Improved Sampled Grating DBR Widely-Tunable 1.55 micrometer-Lasers

Mason¹,

Barton²,

Coldren³

2000

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Over the last three years, a number of improvements have been made in the design of SGDBR lasers with integrated componentry. Device design has improved the output power and tuning range due to an increase in the number of quantum wells in the active region from four to six. Devices with up to 8 mW of output power with integrated amplifiers and buried heterostructure devices with 72 nm tuning ranges were realized. Current laser results indicate that leakage current in buried heterostructure lasers is a major factor in limiting the device performance. To eliminate the parasitic leakage paths we have begun to investigate Fe doped blocking junctions for the device. Work on the wavelength monitor has focused on an external approach, which uses a wavelength dependent coupler in conjunction with a pair of photodetectors. Initial results show better than 1 nm sensitivity over a 30 nm range. The most recent work on the laser has focussed on integrating additional components for increased functionality. We have developed a curved waveguide semiconductor optical amplifier that can be integrated with the laser to increase the output power to greater than 6 mW.We have also investigated SGDBR lasers with integrated electro-absorption modulators. Using a 300 urn long bulk EA modulator we have demonstrated error free data transmission at 2.5 GBit/s with a 2 3I -1 pattern length at received powers of-32.5 dBm. Subject termsSemiconductor lasers, photonic integrated circuits, wavelength monitors, WDM devices, semiconductor optical amplifiers, electro-absorption modulators IntroductionThe goal of this program was to develop a widely tunable semiconductor laser diode with an integrated wavelength monitor. The widely tunable laser is a four section device with a pair of sampled grating distributed Bragg reflector mirrors as shown in figure 1. These devices use a Vernier effect tuning mechanism to provide widely tunable wavelength ranges. Because of the simple offset waveguide design, SGDBR lasers are easily integrated with other optoelectronic devices such as wavelength monitors, optical amplifiers, and modulators to form photonic integrated circuits. They employ periodically sampled grating mirrors which have multiple reflection peaks spaced approximately 5-7 nm apart. The duty cycle and sampling periods have been optimized for the desired wavelength coverage. A phase control section is included to enable alignment of the cavity mode with the mirror reflection peaks. Devices were fabricated using both ridge and buried ridge waveguide processes with passive regions formed by a combination of etching and MOCVD regrowth.This work is discussed in detail in Dr. T.G.B Mason's dissertation -which is included as Appendix I. Supplementary material outlining work on semiconductor optical amplifiers (SOAs) and Electro-absorption modulators (EAM) is also included in the report. Thesis summaryFirst we will briefly summarize the key results from Dr. Mason's dissertation. In appendix I, Dr. Mason discusses the design and development of ph...

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“…The pump pulses excite carriers in the LT-grown material under test through pair-breaking by above-bandgap energy photons. This carrier injection induces an absorption change in LT-GaAs through band filling, band gap renormalization and free carrier absorption [22]. This pump-induced change in absorption, Aa(t), and the corresponding change in reflection, evolve along with the carrier population due to a number of phenomena.…”

Section: Ultrashort Carrier Lifetimementioning

confidence: 99%

Optoelectronic applications of LTMBE III–V materials

Whitaker

1993

Materials Science and Engineering: B

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A review of the application of semiconductor layers grown at low substrate temperatures to ultrafast optoelectronics is presented. The films, grown by molecular beam epitaxy primarily around 200 °C and subsequently annealed, are demonstrated to have high resistivity, high mobility, an ultrashort carrier lifetime, and a high dielectric breakdown. This combination of properties makes the low-temperature-grown materials perfectly suited for use in high-speed optoelectronic devices. A number of issues which influence the application of these materials, such as growth temperature, use of an annealing process, layer thickness, and optical wavelength, are considered. Examples of low-temperature-grown semiconductor optoelectronic devices, including ultra-high-bandwidth photoconductive detectors, high-sensitivity, highbandwidth MSM photodetectors, and optical temporal analyzers are demonstrated. While the discussion concentrates on low-temperature-grown GaAs, the lattice-mismatched ternary compound InxGa ~ _xAs/GaAs is also considered in the context of detection of the longer wavelengths used in optical communications.

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Carrier-induced change in refractive index of InP, GaAs and InGaAsP

Cited by 916 publications

References 34 publications

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique

Improved Sampled Grating DBR Widely-Tunable 1.55 micrometer-Lasers

Optoelectronic applications of LTMBE III–V materials

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